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SB830CT

Description
Schottky diodes
CategoryDiscrete semiconductor    diode   
File Size112KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

SB830CT Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: SB830CT


parameter:


Repetitive reverse voltage peak Vrrm: 30V


Maximum average rectified current Io: 8A


Maximum forward surge current I FSM: 150A


Forward voltage drop VF: 0.55V when IF=4A


Maximum feedback current IR: 200uA when VR=30V


Package: TO-220AB


SB830CT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeTO-220AB
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

SB830CT Preview

Download Datasheet
SB820CT SERIES
SCHOTTKY BARRIER RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forward voltage, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
• In compliance with EU RoHS 2002/95/EC directives
0.177(4.5)
MAX.
0.058(1.47)
0.042(1.07)
0.038(0.96)
0.019(0.50)
0.50(12.7)MIN.
0.624(15.87)
0.548(13.93)
0.419(10.66)
0.387(9.85)
0.139(3.55)
MIN.
0.196(5.00)
0.163(4.16)
0.054(1.39)
0.045(1.15)
20 to 60 Volts
CURRENT
8 Amperes
free wheeling , and polarlity protection applications.
0.115(2.92)
0.080(2.03)
0.025(0.65)MAX.
MECHANICAL DATA
• Case: TO-220AB molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.0655 ounces, 1.859 grams.
0.100(2.54)
0.100(2.54)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Maxi mum Rec urre nt P e ak Reve rs e Vo ltag e
Maxi mum RMS Voltag e
Maxi mum D C B lock i ng Vo ltag e
Maxi mum A ve ra ge F orward C urrent at T
C
=75
O
C
P ea k F o rwa rd S urge C urrent : 8.3ms s i ngle ha lf s i ne-wave
sup eri mpos ed o n rate d load (J E D E C me thod)
Maxi mum F o rwa rd Volta ge a t 4 .0 A
Maxi mum D C Re verse C urrent a t Ra te d D C B lock i ng
Vo ltage
Typi c al The rma l Re si stanc e
Ope ra ti ng J unc ti on Temp erature Range
S to ra ge Temp erature Range
T
J
=25
O
C
T
J
=10 0
O
C
S YMB OL
V
RRM
V
RMS
V
R
I
F (AV )
I
FS M
V
F
I
R
R
θJC
T
J
T
S TG
S B 8 20C T S B 83 0C T S B 84 0C T S B 8 45C T S B 85 0C T S B 86 0C T UNITS
20
14
20
30
21
30
40
28
40
8
15 0
0.55
0.2
50
3
-55 to +125
-5 5 to +15 0
-5 5 to +1 50
0.1
50
O
45
31
45
50
35
50
60
42
60
V
V
V
A
A
0.75
V
mA
C / W
O
C
C
O
NOTES:
Both Bonding and Chip structure are available.
May 30,2011-REV.04
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