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SB820DC_09

Description
8 A, 30 V, SILICON, RECTIFIER DIODE, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size119KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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8 A, 30 V, SILICON, RECTIFIER DIODE, TO-263AB

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SB820DC~SB860DC
D
2
PAK SURFACE MOUNTSCHOTTKY BARRIER RECTIFIER
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
20 to 60 Volts
CURRENT
8 Ampere
MECHANICALDATA
• Case: TO-263 / D
2
PAK molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.06 ounces, 1.7 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt a t T c = 7 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne -
w a ve s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 4 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n Te m p e r a t u r e R a n g e
S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
DC
I
F ( A V )
I
F S M
V
F
I
R
R
θ
J C
R
θ
J A
T
J
T
S TG
SB820DC SB830DC SB840DC SB850DC SB860DC
20
14
20
30
21
30
40
28
40
8
150
0 .5 5
0 .2
50
3
60
-5 5 to +1 2 5
-5 5 to +1 5 0
-5 5 to +1 5 0
0 .7 5
0 .1
50
50
35
50
60
42
60
U N IT S
V
V
V
A
A
V
mA
O
C / W
O
C
C
O
NOTES:
Both Bonding and Chip structure are available.
STAD-APR.27.2009
PAGE . 1
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