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SB620_00001

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB620_00001 Overview

Rectifier Diode

SB620_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codecompliant
Is SamacsysN
Diode typeRECTIFIER DIODE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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SB620 SERIES
ISOLATION SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrad voltage, high current capability
• High surge capacity.
• For use in low voltage, high frequency inverters
free wheeling , and polarlity protection applications.
• Lead free in comply with EU RoHS 2011/65/EU directives
20 to 60 Volts
CURRENT
6 Amperes
MECHANICAL DATA
• Case: TO-220AC molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.055 ounces, 1.5615 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
Ma xi m um Re c urr e nt P e a k Re ve r s e Vo lta g e
Ma xi m um RM S Vo lta g e
Ma xi m um D C B lo c k i ng Vo lta g e
Ma xi m um A ve ra g e F o r wa rd C urr e nt a t T
C
= 7 5
O
C
P e a k F o r wa rd S urg e C urr e nt : 8 .3 m s s i ng le ha lf s i ne -
wa ve s up e ri m p o s e d o n ra te d lo a d ( J E D E C m e tho d )
Ma xi m um F o rwa r d Vo lta g e a t 6 A
Ma xi m um D C Re ve rs e C ur re nt a t Ra te d D C
B lo c k i ng Vo lta g e
Typ i c a l The rm a l Re s i s ta nc e
Op e r a ti ng J unc ti o n Te m p e ra tur e Ra ng e
S to r a g e Te mp e r a ture Ra ng e
T
J
= 2 5
O
C
T
J
= 1 0 0
O
C
S YM B OL
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
J
C
T
J
T
S TG
SB620
20
14
20
SB630
30
21
30
SB640
40
28
40
6
75
SB650
50
35
50
SB660
60
42
60
UNITS
V
V
V
A
A
0 .5 5
0 .2
15
3
-5 5 to + 1 2 5
0 .7
V
mA
O
C / W
O
-5 5 to + 1 5 0
- 5 5 to + 1 5 0
C
C
O
NOTE:
Both Bonding and Chip structure are available.
January 18,2013-REV.03
PAGE . 1
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