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SB620F_04

Description
6 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size42KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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6 A, 20 V, SILICON, RECTIFIER DIODE, TO-220AC

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DATA SHEET
SB620F~SB660F
ISOLATION SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
.112(2.85)
.100(2.55)
.272(6.9)
.248(6.3)
20 to 60 Volts
CURRENT
6.0 Ampers
ITO-220AC
Unit : inch (mm)
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• Pb free product are available :
99% Sn above can meet Rohs environment
substance directive request
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.189(4.8)
.165(4.2)
.130(3.3)
.114(2.9)
.606(15.4)
.583(14.8)
• High surge capacity.
MECHANICALDATA
Case: ITO-220AC full molded plastic package
Terminals: Lead solderable per MIL-STD-202G, Method 208
Polarity: As marked.
Mounting Position: Any
Weight: 0.08 ounces, 2.24grams.
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.1
(2.55)
.1
(2.55)
.161(4.1)MAX
.543(13.8)
.512(13.0)
.071(1.8)
.055(1.4)
.114(2.9)
.098(2.5)
.032(.8)
MAX
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PAR AME T E R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )
l e a d l e ng t h a t T c = 7 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 6 . 0 A
M a xi m um D C R e ve r s e C ur r e nt T
C
= 2 5
O
C
a t R a t e d D C B l o c k i ng V o l t a g e T
C
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n Te m p e r a t u r e R a n g e
S t o r a g e Te m p e r a t u r e R a n g e
S YM B OL
V
RRM
V
RMS
V
DC
I
AV
I
F S M
V
F
0 .5 5
0 .2
15
6
80
-5 0 to +1 2 5
-5 0 to +1 5 0
O
SB620F
20
14
20
SB630F
30
21
30
SB640F SB650F SB660F
40
28
40
6 .0
75
0 .7 0
50
35
50
60
42
60
U N IT S
V
V
V
A
A
V
I
R
Rθ J C
Rθ J A
T
J
T
J
, T
S TG
mA
C / W
O
C
C
O
NOTES:
Both Bonding and Chip structure are available.
STAD-MAY.05.2004
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