SB3060ST datasheet, PDF - EEWORLD Datasheet

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SB3060ST: DescriptionSchottky diodes; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB3060ST Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model: SB3060ST

parameter:

Repetitive reverse voltage peak Vrrm: 60V

Maximum average rectified current Io: 30A

Maximum forward surge current I FSM: 275A

Forward voltage drop VF: 0.75V when IF=15A

Maximum feedback current IR: 200uA when VR=60V

Package: TO-3PS/TO-247S

SB3060ST Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	TO-247
package instruction	R-PSFM-T3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	TO-247
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	275 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	15 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	60 V
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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MBR3020ST SERIES

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

20 to 100 Volts

CURRENT

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

0.577(14.65)

0.565(14.35)

0.776(19.70)

0.759(19.30)

0.732(18.58)

0.715(18.18)

30 Amperes

0.615(15.60)MAX.

0.520(13.20)

0.504(12.80)

0.402(10.20)

0.385(9.80)

0.185(4.70)

0.169(4.30)

0.516(13.20)

0.504(12.80)

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency.

• High current capability

• Guardring for overvoltage protection

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• In compliance with EU RoHS 2002/95/EC directives

0.118(3.0)

MIN.

0.599(15.20)

0.582(14.80)

MECHANICAL DATA

• Case: TO-247S/TO3PS molded plastic

• Terminals: solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Mounting Position: Any

• Weight: 0.1932 ounces, 5.4803 grams.

0.071(1.80)

0.055(1.40)

0.095(2.40)

0.078(2.00)

0.050(1.25)

0.037(0.95)

0.166(4.20)

0.149(3.80)

0.579(14.70)

0.563(14.30)

0.103(2.60)

0.090(2.30)

0.025(0.62)

0.014(0.38)

0.223(5.65)

0.206(5.25)

0.223(5.65)

0.206(5.25)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RA ME TE R

Maxi mum Rec urre nt P e ak Re vers e Volta ge

Maxi mum RMS Volta ge

Maxi mum D C B lo cki ng Voltage

Maxi mum A verag e Fo rwa rd C urre nt

P e ak F orward S urg e C urrent :8 .3ms si ngle

ha lf s i ne -wa ve sup eri mp ose d on ra ted lo ad

(J E D E C metho d)

Maxi mum F orwa rd Volta ge a t 1 5A p er leg

Maxi mum D C Re verse C urre nt at

Ra ted D C B lo cki ng Volta ge

Typi ca l The rma l Res i stance

Ope rati ng Juncti o n a nd S tora ge Te mp era ture

Ra ng e

=25

=12 5

S YMB OL

RRM

RMS

F(AV )

FS M

J

S TG

MB R30 2 0S T MB R3 0 30 S T MB R3 0 40 S T MB R3 04 5 S T MB R30 5 0S T MB R3 0 60 S T MB R3 08 0 S T MB R30 9 0S T MB R30 1 00 S T

UNITS

3 1.5

100

27 5

0 .70

0.1

1 .4

-5 5 to + 15 0

0.7 5

0 .8

0.05

C /

-6 5 to + 17 5

Note :

Both Bonding and Chip structure are available.

August 31,2010-REV.02

PAGE . 1

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