SB10T100 datasheet, PDF - EEWORLD Datasheet

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SB10T100: CategoryDiscrete semiconductor Schottky diode; File Size185KB，3 Pages; ManufacturerChongqing Pingwei Enterprise co.,Ltd.; Websitehttp://www.perfectway.cn; Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).

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SB10T100 规格书

SB10T100

10.0AMPS. SCHOTTKY BARRIER RECTIFIERS

FEATURE

.For

surface mounted application

.High

current capability

.Low

forward voltage drop

.Low

power loss, high efficiency

.High

surge current capability

.High

temperature soldering guaranteed:

260°C /10sec/ 0.375" lead length at 5 lbs tension

DO-27/DO-201AD

0.96(24.4)

MIN.

.375(9.5)

.335(8.5)

0.96(24.4)

MIN.

.220(5.6)

.187(5.0)

DIA.

.051(1.3)

.043(1.1)

MECHANICAL DATA

.Terminal:

Solder plated

.Case:

Molded with UL-94 Class V-0 recognized

Flame Retardant Epoxy (free halogen)

.Polarity:

color band denotes cathode

.Mounting

position: any

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%

DIA.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Type Number

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified Current

Peak Forward Surge Current 8.3ms single half

sine-wave

superimposed

rated

load

SYM

BOL

SB10T100

100

10.0

120

0.7

0.1

10.0

800

-55 to +150

units

°C/W

°C

RRM

RMS

F(AV)

FSM

F(MAX)

(JL)

STG

(JEDEC method)

Maximum Forward Voltage

Maximum DC Reverse Current

atrated DCblockingvoltage

at 10.0A DC

=25°C

=100°C

Typical Junction Capacitance (Note1)

Typical Thermal Resistance (Note2)

Storage Temperature

Operating Junction Temperature

Note:

1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

2. Thermal Resistance from Junction to Ambient at 0.375"(9.5mm)lead length, vertical P.C.Board Mounted

-1-

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