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SB1030F_10001

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size95KB,4 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB1030F_10001 Overview

Rectifier Diode

SB1030F_10001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompliant
Diode typeRECTIFIER DIODE

SB1030F_10001 Preview

Download Datasheet
SB1020F~SB1060F
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of
MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
Lead free in comply with EU RoHS 2002/95/EC directives
20 to 60 Volts
CURRENT
10 Amperes
MECHANICALDATA
• Case: ITO-220AC Molded plastic
• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Standard packaging: Any
• Weight: 0.055 ounces, 1.5615 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt a t T
C
= 7 5
O
C
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 1 0 A ,
M a xi m um D C R e ve r s e C ur r e nt a t T
J
= 2 5
O
C
R a t e d D C B l o c k i ng V o l t a g e T
J
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n Te m p e r a t u r e R a n g e
S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
S B 1 0 2 0 F S B 1 0 3 0 F S B 1 0 4 0 F S B 1 0 4 5 F S B 1 0 5 0 F S B 1 0 6 0 F
V
RRM
V
RMS
V
DC
I
F ( A V )
I
F S M
V
F
I
R
R
θ
J C
T
J
T
S TG
-5 5 to +1 2 5
0 .2
50
3 .0
-5 5 to +1 5 0
-5 5 to +1 5 0
0 .5 5
0 .1
50
20
14
20
30
21
30
40
28
40
10
150
0 .7 5
45
3 1 .5
45
50
35
50
60
42
60
U N IT S
V
V
V
A
A
V
mA
O
C / W
O
C
C
O
Note.
Both Bonding and Chip structure are available.
STAD-APR.27.2009
1
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