SA33CA_B0_10001 datasheet, PDF

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SA33CA_B0_10001: DescriptionTrans Voltage Suppressor Diode, 500W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-15,; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SA33CA_B0_10001 Overview

Trans Voltage Suppressor Diode, 500W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-15,

SA33CA_B0_10001 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	O-PALF-W2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Maximum breakdown voltage	42.2 V
Minimum breakdown voltage	36.7 V
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-15
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	500 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Maximum repetitive peak reverse voltage	33 V
surface mount	NO
technology	ZENER
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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SA5.0~SA220CA

GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR POWER 500 Watts

STAND-OFF VOLTAGE

FEATURES

1.0(25.4)MIN.

5 to 220 Volts

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

• Glass passivated chip junction in DO-15 package

• 500W surge capability at 1ms

• Excellent clamping capability

• Fast response time: typically less than 1.0 ps from 0 volts to BV min

• High temperature soldering guaranteed: 260°C/10 seconds/.375"

,(9.5mm) lead length/5lbs., (2.3kg) tension

• Lead free in comply with EU RoHS 2011/65/EU directives

• Low zener impedance

0.034(0.86)

0.028(0.71)

0.300(7.6)

0.230(5.8)

MECHANICAL DATA

• Case: JEDEC DO-15 molded plastic

• Terminals: Axial leads, solderable per MIL-STD-750, Method 2026

• Polarity: Color band denotes cathode end

• Mounting Position: Any

• Weight: 0.015 ounce, 0.4 gram

DEVICES FOR BIPOLAR APPLICAIONS

For Bidire ctional use C or CA Suffix for types Electrical characteristics apply in both directions.

MAXIMUM RATINGS AND CHARACTERISTICS

Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.

For Capacitive load derate current by 20%.

1.0(25.4)MIN.

0.140(3.6)

0.104(2.6)

RATING

Peak Pulse Power Dissipation at T

=25°C, T

=1ms(Note 1, Fig.1)

Peak Pulse Current of on 10/1000µs waveform (Note 1,Fig.3)

Typical Thermal Resistance Junction to Air Lead Lengths .375",(9.5mm)

(Note 2)

Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Superimposed

on Rated Load(JECED Method) (Note 3)

Operating and Storage Temperature Range

SYMBOL

PPM

θJA

FSM

, T

STG

VALUE

500

SEE TABLE 1

UNITS

Watts

Amps

°C / W

-65 to +175

Amps

°C

NOTES :

1.Non-repetitive current pulse, per Fig. 3 and derated above T

=25°C per Fig. 2.

2.Mounted on Copper Leaf area of 1.57in

(40mm

3.8.3ms single half sine-wave, duty cycle= 4 pulses per minutes maximum.

4.A transient suppressor is selected according to the working peak reverse voltage (V

RWM

), which should be equal to or greater than the

DC or continuous peak operating voltage level.

November 15,2012-REV.05

PAGE . 1

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