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S8050

Description
Transistor type: NPN Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 25V Rated power: 225mW NPN
CategoryDiscrete semiconductor    triode   
File Size973KB,4 Pages
ManufacturerANBON SEMICONDUCTOR
Websitehttp://www.formosagr.com/

Anbon (AS) is a world-leading manufacturer of the chip and package of SiC Diodes, Si Diodes, and MOS in semiconductor industry. Their core technology has the advantages of upstream and downstream integration. AS focuses on the development and production of power semiconductor devices such as MOS, TVS, Schottky diodes, and more. AS products are divided into automotive, industrial, and commercial.

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S8050 Overview

Transistor type: NPN Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 25V Rated power: 225mW NPN

S8050 Parametric

Parameter NameAttribute value
Transistor typeNPN
Collector current Ic500mA
Collector-emitter breakdown voltage Vce25V
rated power225mW

S8050 Preview

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S8050
General Purpose Transistors
NPN Silicon
Features
High current capacity in compact package I
C
= 0.5A.
Epitaxial planar type
Pb-Free package is available
Suffix
"-H"
indicates Halogen free parts, ex. S8050-H.
Package outline
SOT-23
0.045 (1.15)
0.034 (0.85)
0.020 (0.50)
(C)
O
0.120 (3.04)
0.110 (2.80)
.084(2.10)
.068(1.70)
(B)
(A)
0.063 (1.60)
0.047 (1.20)
0.027 (0.67)
0.013 (0.32)
0.108 (2.75)
0.083 (2.10)
0.007 (0.18)
0.003 (0.09)
Mechanical data
Epoxy:UL94-V0 rated flame retardant
Case : Molded plastic, SOT-23
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
0.051 (1.30)
0.035 (0.89)
Mounting Position : Any
Weight : Approximated 0.008 gram
Dimensions in inches and (millimeters)
Maximum ratings
(AT T =25 C unless otherwise noted)
o
A
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current-continuoun
Symbol
V
CBO
V
CEO
V
EBO
I
C
MAX.
40
25
5.0
500
UNIT
V
V
V
mAdc
Thermal Characteristics
PARAMETER
T = 25
O
C
Total device dissipation FR-5 board
A
O
(1)
Derate above 25 C
Thermal resistance
Total device dissipation alumina
substrate(2)
Thermal resistance
Storage temperature Range
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
Junction to ambient
T
A
= 25 C
Derate above 25
O
C
Junction to ambient
R
θJA
T
J
T
STG
-55
-55
O
Symbol
P
D
MIN.
TYP.
MAX. UNIT
225
1.8
mW
mW/ C
O
R
θJA
P
D
556
300
2.4
417
+150
+150
C/W
mW
mW/
O
C
O
C/W
o
Operating Junction temperature Range
C
C
o
Document ID
Issued Date
2013/03/08
Revised Date
2016/05/16
0.012 (0.30)
Revision
D
Page.
4
Page 1
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