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S3J-AU_R2_000A1

Description
Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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S3J-AU_R2_000A1 Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

S3J-AU_R2_000A1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PDSO-C2
Reach Compliance Codecompli
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
GuidelineAEC-Q101; TS 16949
Maximum repetitive peak reverse voltage600 V
Maximum reverse current1 µA
surface mountYES
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

S3J-AU_R2_000A1 Preview

Download Datasheet
S3A-AU~S3M-AU
SURFACE MOUNT RECTIFIER
VOLTAGE
50 to 1000 Volts
CURRENT
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• For surface mounted applications in order to optimize board space
• Built-in strain relief
• Easy pick and place
• Glass passivated iunction
• Acqire quality system certificate : TS16949
AEC-Q101 qualified
• Lead free in comply with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.128(3.25)
0.108(2.75)
0.245(6.22)
0.220(5.59)
0.280(7.11)
0.260(6.60)
0.012(0.305)
0.006(0.152)
0.103(2.62)
0.079(2.00)
0.050(1.27)
0.030(0.76)
0.320(8.13)
0.305(7.75)
0.008(0.203)
0.002(0.051)
3 Amperes
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic
Terminals:Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Color band denotes cathode end
Standard packaging: 16mm tape (EIA-481)
Weight: 0.007 ounce, 0.21 gram
1
2
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase , half wave ,60Hz, resistive or inductive load.
For capacitive load , derate current by 20%.
PA RA ME TE R
Ma xi mum Re c urre nt P e a k Re ve rs e Vo lta g e
Ma xi mum R MS Vo lta g e
Ma xi mum D C B lo c k i ng Vo lta g e
Ma xi mum A ve ra g e F o r wa rd Re c ti fi e d C urre nt a t T
L
= 7 5
O
C
P e a k F o rwa rd S urg e C urre nt : 8 .3 m s s i ng le ha lf s i ne -wa ve
s up e ri mp o s e d o n ra te d lo a d (J E D E C me tho d )
Ma xi mum F o rwa rd Vo lta g e a t 3 A
Ma xi mum D C Re ve rs e C urre nt at Ra te d D C B lo c k i ng
Vo lta g e
Ma xi mum J unc ti o n C a p a c i ta nc e ( No te 1 )
Typ i c a l J unc ti o n Re s i s ta nc e (No te 2 )
T
J
=2 5
O
C
T
J
=1 2 5
O
C
S YM B OL S 3 A -A U S 3 B -A U S 3 D -A U S 3 G-A U S 3 J -A U S 3 K -A U S 3 M- A U UNITS
V
RRM
V
RMS
V
DC
I
F (AV )
I
F SM
V
F
I
R
C
J
R
θJ
L
R
θJ
A
T
J
,T
S TG
50
35
50
100
70
100
200
140
200
400
280
400
3
100
1 .2
1
250
53
13
47
-5 5 to +1 5 0
O
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
μA
pF
C / W
O
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
C
NOTES:
1.Measured at 1.0 MHZ and applied Vr=4.0 volts.
2.8.0mm
2
(.013mm thick)land areas.
December 18,2012-REV.06
PAGE . 1
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