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RLS245

Description
Rectifier Diode
CategoryDiscrete semiconductor    diode   
ManufacturerExcel(Suzhou) Semiconductor Co., Ltd.
Websitehttp://www.excel-semi.com/
Download Datasheet Parametric View All

RLS245 Overview

Rectifier Diode

RLS245 Parametric

Parameter NameAttribute value
MakerExcel(Suzhou) Semiconductor Co., Ltd.
Reach Compliance Codeunknown
ECCN codeEAR99
Diode typeRECTIFIER DIODE

RLS245 Preview

RLS245
High-voltage switching diode
Features
1. Small surface mounting type
2. High reliability
3. V
RM
=250V
Applications
High voltage switch and general purpose rectification
Construction
Silicon epitaxial planar
Absolute Maximum Ratings
T
j
=25℃
Parameter
Peak reverse voltage
DC reverse voltage
Surge current
Mean rectifying current
Peak forward current
Power dissipation
Junction temperature
Storage temperature range
t
p
=1s
Test Conditions
Type
Symbol
V
RM
V
R
I
Surge
I
O
I
FM
P
T
j
T
stg
Value
250
220
1
200
625
300
175
-65~+175
Unit
V
V
A
mA
mA
mW
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
1/3
RLS245
Electrical Characteristics
T
j
=25℃
Parameter
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Test Conditions
I
F
=200mA
V
R
=220V
V
R
=0, f=1MHz
I
F
= I
R
=20mA, R
L
=50Ω
Type
Symbol
V
F
I
R
C
D
t
rr
Min
Typ
1.13
0.05
Max
1.5
10
3
75
Unit
V
uA
pF
ns
Characteristics
(Ta=25℃ unless specified otherwise)
Forward current: I
F
(mA)
Forward voltage: V
F
(V)
Reverse current: I
R
(nA)
Reverse voltage: V
R
(V)
Figure 1. Forward characteristics
Figure 2. Reverse characteristics
Capacitance between terminals: C
T
(pF)
Reverse voltage: V
R
(V)
Reverse recovery time: trr(ns)
Forward current: I
F
(mA)
Figure 3. Capacitance between terminals
characteristics
Figure 4. Reverse recovery time
characteristics
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
2/3
RLS245
Surge current: I
surge
(A)
Pulse width: Tw (ms)
Figure 5. Surge current characteristics
Figure 6. Reverse recovery time (trr)
measurement circuit
Dimensions in mm
Cathode identification
0.3
3.5±0.2
Glass Case
Mini Melf / SOD-80
JEDEC DO-213 AA
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
3/3
Φ1.5±0.1
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