RB521S-30 datasheet, PDF - EEWORLD Datasheet

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RB521S-30: DescriptionDC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 500mV @ 200mA 30V, 0.2A, VF=0.5V@200mA; CategoryDiscrete semiconductor Schottky diode; File Size1MB，3 Pages; ManufacturerSHIKUES; Websitehttp://www.shike.tw; Shike, originated from Taiwan, China, is one of the world's leading semiconductor discrete component manufacturers. It mainly provides engineers and designers with various semiconductor products and software, bringing better sensory experience to products such as automobiles, communications, computers, consumer electronics, industry, LED lighting, medical and power applications. Since its establishment, under the guidance of the core concept of "making products have good cores", with safety, low energy consumption and high performance as its purpose, Shike Semiconductor's R&D strategy has never wavered. Nearly a quarter of its employees work in the field of R&D and product design, and annual R&D expenses account for about 22% of total revenue. In addition, with the hard work of young, dream-filled and passionate employees, Shike has developed rapidly, and its products are exported to North America, Europe and the Asia-Pacific region. It is considered one of the most innovative companies in the semiconductor industry. Shike will continue to optimize in terms of safety, energy consumption and performance, and more flexibly meet the needs of design engineers and the ever-changing market. From concept design to production and manufacturing, we will provide full support. Looking to the future, we will focus on innovation and continue to create value for our customers, employees and society as a whole. By reducing energy consumption, improving safety and enhancing performance, we will focus on how to use technological research and development to improve the quality of life of the public. We will go all out to fulfill our commitments.

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RB521S-30 Overview

DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 500mV @ 200mA 30V, 0.2A, VF=0.5V@200mA

RB521S-30 Parametric

Parameter Name	Attribute value
DC reverse withstand voltage (Vr)	30V
Average rectified current (Io)	200mA
Forward voltage drop (Vf)	500mV @ 200mA

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RB521S-30

SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

for low current rectification and high speed

switching applications

PINNING

DESCRIPTION

Cathode

Anode

Features

• Extremely small surface mounting type

Top View

Marking Code: "C"

Simplified outline SOD-523 and symbol

Absolute Maximum Ratings (T

= 25

Parameter

Reverse Voltage

Mean Rectifying Current

Peak Forward Surge Current (60Hz for Cyc.)

Junction Temperature

Storage Temperature Range

Symbol

FSM

stg

Value

200

125

- 40 to + 125

Unit

Characteristics at T

= 25

Parameter

Forward Voltage

at I

= 200 mA

Reverse Current

at V

= 10 V

Symbol

Max.

Unit

µA

0.5

1 of 3

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