PTP02N04NB datasheet, PDF - EEWORLD Datasheet

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PTP02N04NB: DescriptionDrain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 120A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.1mΩ @ 24A, 10V Maximum power consumption Dispersed (Ta=25°C): 300W (Tc) Type: N channel N channel, 40V, 1.65m?@10V, 245A; CategoryDiscrete semiconductor MOS (field effect tube); File Size774KB，9 Pages; ManufacturerPerfect Intelligent Power Semiconductor Co.,Ltd.; Websitehttp://www.pipsemi.com/; PIP-Semi is a high-tech company founded in Colorado, USA. The company's R&D team comes from Fairchild, IR, and TFSS. Since its establishment in 2003, it has been focusing on the design and development of advanced semiconductor power devices and integrated circuits, chip processing, and packaging and testing technology. The company develops and produces advanced semiconductor power devices such as VDMOS, SG MOSFET, Coolmos, IGBT, Gate Driver IC, and related power management integrated circuit products, which are widely used in energy saving, green lighting, smart grid, electric vehicles, industrial control equipment, consumer electronics and other fields. The company adheres to the corporate culture of "integrity, trust, confidence, and faith" to provide customers with perfect, innovative, professional products and a full range of services. Creating value for customers is our eternal purpose.

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PTP02N04NB Overview

Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 120A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 2.1mΩ @ 24A, 10V Maximum power consumption Dispersed (Ta=25°C): 300W (Tc) Type: N channel N channel, 40V, 1.65m?@10V, 245A

PTP02N04NB Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	40V
Continuous drain current (Id) at 25°C	120A(Tc)
Gate-source threshold voltage	4V @ 250uA
Drain-source on-resistance	2.1mΩ @ 24A,10V
Maximum power dissipation (Ta=25°C)	300W(Tc)
type	N channel

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PTP02N04NB

40V N-Channel MOSFET

General Features



Proprietary New Trench Technology

DS(ON),typ.

=1.65 m Ω@V

=10V

Low Gate Charge Minimize Switching Loss

Fast Recovery Body Diode

DSS

40V

DS(ON),typ.

1.65mΩ

245A

Applications



High efficiency DC/DC Converters

Synchronous Rectification

UPS Inverter

TO-220

Ordering Information

Part Number

PTP02N04NB

Package

TO-220

Brand

Package Not

to Scale

Absolute Maximum Ratings

Symbol

DSS

GSS

dv/dt

PAK

& T

STG

=25℃ unless otherwise specified

Parameter

Drain-to-Source Voltage

[1]

Gate-to-Source Voltage

Continuous Drain Current

[2]

Continuous Drain Current

[3]

Continuous Drain Current @ Tc=100℃

[2]

Pulsed Drain Current at V

=10V

Single Pulse Avalanche Energy,L=1mH

Peak Diode Recovery dv/dt

[3]

Power Dissipation

Derating Factor above 25℃

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10

seconds, Package Body for 10 seconds

Operating and Storage Temperature Range

PTP02N04NB

245

120

165

735

1200

5.0

300

2.0

300

260

-55 to 175

Unit

V/ns

W/℃

℃

Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.

Thermal Characteristics

Symbol

θJC

θJA

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

PTP02N04NB

0.5

℃/W

Unit

Semiconductors and may not be edited, reproduced, or redistributed in any way without written consent from PIP.

Page 8 / 8

Rev. A.2018

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