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PS20U45S

CategoryDiscrete semiconductor    Schottky diode   
File Size275KB,4 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
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PS20U45S&PS20U45FS
PS20U45S&PS20U45FS
20.0AMPS. SCHOTTKY BARRIER RECTIFIERS
FEATURE
.High
current capability
.Ultra
low forward voltage drop
.Low
power loss, high efficiency
.High
surge capability
.High
temperature soldering guaranteed
260°C /10seconds, 0.25"(6.35mm)from case.
TO-220AB
PS20U45S
ITO-220AB
PS20U45FS
MECHANICAL DATA
.Case:
Molded with UL-94 Class V-0 recognized
Flame Retardant Epoxy
.Mounting
position: any
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS
(T
C
=25℃ unless otherwise noted)
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current
at T
C
=100°C
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operation Junction Temperature and Storage Temperature
Total device
Peak Forward Surge Current 8.3ms single half sine-wave
Symbol
PS20U45S&PS20U45FS
45
32
45
20.0
150.0
1700
-55 to +150
Typ
Max
---
---
Units
V
V
V
A
A
pF
°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
C
J
T
J
,
T
STG
ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
Parameter
Symbol
Test conditions
Units
T
J
=25℃
Forward voltage drop
V
F
T
J
=125℃
Reverse leakage current
I
R
T
J
=25℃
T
J
=125℃
I
F
=2A
I
F
=5A
I
F
=20A
I
F
=2A
I
F
=5A
I
F
=20A
V
R
=45V
V
R
=45V
Symbol
0.31
0.36
0.50
0.22
0.28
0.48
---
---
PS20U45S
2.0
0.60
---
---
V
0.55
250
μA
mA
50
PS20U45FS
3.0
THERMAL CHARACTERISTICS
(T
C
=25℃ unless otherwise noted)
Parameter
Typical Thermal Resistance (Note 2)
Units
°C /W
R
(JC)
Notes:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Thermal Resistance from Junction to Case
1
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