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PJSD05TG-R1-10001

Description
Transient Suppressor,
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJSD05TG-R1-10001 Overview

Transient Suppressor,

PJSD05TG-R1-10001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompliant
ECCN codeEAR99

PJSD05TG-R1-10001 Preview

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PJSD03TG~PJSD36TG
SINGLE LINE TVS DIODE FOR ESD PROTECTION PORTABLE ELECTRONICS
VOLTAGE
FEATURES
• 100 Watts peak pules power( tp=8/20
µs)
• Small package for use in portable electronics
• Suitable replacement for MLV’S in ESD protection applications
• Low clamping voltage and leakage current
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.026(0.65)
0.021(0.55)
0.022(0.55)
0.017(0.45)
0.042(1.05)
0.037(0.95)
3~36 Volts
POWER
100 Watts
SOD-723
Unit
inch(mm)
APPLICATIONS
• Case: SOD-723 plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx.Weight : 0.0008 grams
• Marking : PJSD03TG : FS
PJSD05T : FT
G
PJSD08T : FU
G
PJSD12TG : FV
PJSD15T : FW
G
PJSD24TG : FX
PJSD36TG : FY
0.007(0.18)
0.003(0.08)
0.057(1.45)
0.053(1.35)
0.006(0.15)MIN.
MAXIMUM RATINGS AND ELECTRICAL CHATACTERISTICS
ABSOLUTE MAXIMUM RATING
Rating
Peak Pulse Power (tp=8/20
µ
s)
ESD Voltage
Operating Temperature
Storage Temperature
ELECTRICAL CHARA CTERISTICS
Symbol
Value
100
25
-50 to 150
-50 to 150
P
PK
V
ESD
T
J
T
STG
PJSD03TG
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage(8/20
µ
s)
Off State Junction Capacitance
Off State Junction Capacitance
Symbol
V
RWM
V
BR
I
R
V
C
C
J
C
J
Conditions
-
I
BR
=1mA
V
R
=3.3V
I
PP
=10A
0Vdc Bias=f=1MHz
3Vdc Bias=f=1MHz
Min.
-
4
-
-
-
-
Typical
-
-
-
-
180
100
Max.
3.3
-
125
7.5
-
-
Units
V
V
µA
V
pF
pF
0.013(0.32)
0.009(0.25)
Units
W
KV
O
C
C
O
REV.0.1-FEB.16.2009
PAGE . 1
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