PJSD05LCTM-AU_B1_10001 datasheet, PDF

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PJSD05LCTM-AU_B1_10001: DescriptionBI-DIRECTIONAL ESD PROTECTION DIODE; File Size182KB，5 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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BI-DIRECTIONAL ESD PROTECTION DIODE

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PJSD05LCTM-AU

BI-DIRECTIONAL ESD PROTECTION DIODE

This Penta has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up

events in CMOS circuitry operating at 5Vdc and below.This offers an integrated solution to protect up to

data line where the board space is a premium.

SPECIFICATION FEATURES

• 25W Power Dippsipation (8/20s Waveform)

• Low Leakage Current, Maximum of 1

A@5Vdc

• Very low Clamping voltage

• IEC 61000-4-2 ESD 15kV air, 8kV Contact Compliance

• Lead free in comply with EU RoHS 2011/65/EU directives

• Green molding compound as per IEC61249 Std. . (Halogen Free)

• Acqire quality system certificate : TS16949

• AEC-Q101 qualified

APPLICATIONS

• Video I/O ports protection

• Set Top Boxes

• Portable Instrumentation

MECHANICAL DATA

• Case : SOD-923, Plastic

• Terminals : Solderable per MIL-STD-750, Method 2026

• Approx. Weight : 0.0004gram

• Marking : X

MAXIMUM RATINGS

Rating

Peak Pulse Power (8/20

s

Waveform)

Peak Pulse Current (8/20

s

Waveform)

ESD Voltage (HBM)

O p e ra t i ng J unc t i o n a nd S t o r a g e Te mp e r a t ur e Ra ng e

Symbol

Value

>25

-55 to +150

Units

ESD

, T

S TG

ELECTRICAL CHARACTERISTICS (T

=25

Parameter

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage (8/20s)

Off State Junction Capacitance

Symbol

WRM

=1mA

=5V

=2A

0 Vdc Bias f=1MHz

Conditions

Min.

5.78

Typ.

Max.

5.0

7.82

1.0

12.5

Units

A

February 2,2013-REV.03

PAGE . 1

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