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PJSD03LCFN2

Description
Protection Device TVS/ESD Arrays
CategoryDiscrete semiconductor    diode   
File Size59KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJSD03LCFN2 Overview

Protection Device TVS/ESD Arrays

Features

Product Name: Protection Device TVS/ESD Arrays


Product model: PJSD03LCFN2


Product parameters:


Peak Power Dissipation 8x20μs PPPM :40W


Reverse Stand-off Voltage VRWM: Max=3.3V


Reverse Leakage IR@VRWM : Max=2.5μA


Max Clamping Voltage@8x20μs PPPM Vc@Ipp :10V


Peak Pulse Current 8x20μs PPPM Ipp :6A


Off-State Capacitance, 1MHz Zero dc Bias Co :Max=25pF


Package:DFN 2L



PJSD03LCFN2 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDFN
package instructionR-PBCC-N2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage7 V
Minimum breakdown voltage5.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PBCC-N2
Maximum non-repetitive peak reverse power dissipation40 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage3.3 V
surface mountYES
technologyAVALANCHE
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

PJSD03LCFN2 Preview

Download Datasheet
PJSD03LCFN2
BI-DIRECTIONAL ESD PROTECTION DIODE
This bi-directional TVS has been designed to protect sensitive equipment against ESD and to prevent Latch-Up
events in CMOS circuitry operating at 3.3Vdc and below.This offers an integrated solution to protect a single data
line where the board space is a premium.
SPECIFICATION FEATURES
• 40W Power Dissipation (8/20μs Waveform)
• Low Leakage Current, Maximum of 2.5μA@3.3Vdc
• Very low Clamping voltage
• IEC 61000-4-2 ESD 30kV air, 30kV Contact Compliance
• In compliance with EU RoHS 2002/95/EC directives
• Terminals : Solderable per MIL-STD-750, Method 2026
• Case : DFN 2L, Plastic
• Marking : BS
0.022(0.55)
0.017(0.45)
0.002(0.05)MAX.
0.042(1.05)
0.037(0.95)
APPLICATIONS
• Video I/O ports protection
• Set Top Boxes
• Portable Instrumentation
0.013(0.32)
0.008(0.22)
0.026(0.65)
0.021(0.55)
PIN NO.1
IDENTIFICATION
MAXIMUM RATINGS
Rating
Peak Pulse Power (8/20
μs
Waveform)
Peak Pulse Current (8/20
μs
Waveform)
O p e ra t i ng J unc t i o n a nd S t o ra g e Te m p e r a tur e Ra ng e
Symbol
Value
40
6
-55 to +150
Units
W
A
O
P
PP
I
PPM
T
J
, T
S TG
0.022(0.55)
0.047(0.45)
C
ELECTRICAL CHARACTERISTICS (T
J
=25
o
C)
Parameter
Reverse Stand-Off Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (8/20μs)
Off State Junction Capacitance
Symbol
V
WRM
V
BR
I
R
V
C
C
J
I
BR
=1mA
V
R
=3.3V
I
PP
=6A
0 Vdc Bias f=1MHz
Conditions
Min.
-
5.4
-
-
-
Typ.
-
-
-
-
-
Max.
3.3
7.0
2.5
10
25
Units
V
V
μA
V
pF
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
January 05,2011-REV.00
PAGE . 1
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