PJP75N75 datasheet, PDF - EEWORLD Datasheet

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PJP75N75: DescriptionPower Mosfet Power MOSFET; CategoryDiscrete semiconductor The transistor; File Size140KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJP75N75 Overview

Power Mosfet Power MOSFET

Features

Product Name: Power Mosfet Power MOSFET

Product model: PJP75N75

Product parameters:

Voltage Range: <=100

Channel: N

Drain-Source Voltage: VDSS: 75V

Gate-Source Voltage Maximum gate-source voltage: VGSS: 20+V

Drain Current: ID: 75A

Maximum Power Dissipation: PD: 105W

Static Drain-Source On-Resistance： Vgs=10V，Rdson (max.)：0.011Ω

Gate Charge: Vgs=10V, Qg: 83nC

Input Capacitance: Vds=25V, Ciss: 3150pF

Reverse Transfer Capacitance: Vds=25V, Crss: 240pF

Package: TO-220AB

PJP75N75 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	660 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	75 V
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.011 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	350 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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PJP75N75

75V N-Channel Enhancement Mode MOSFET

FEATURES

• R

DS(ON)

, V

@10V,I

@30A=11mΩ

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for Converters and Power Motor Controls

• Fully Characterized Avalanche Voltage and Current

•

Lead free in comply with EU RoHS 2002/95/EC directives.

MECHANICAL DATA

• Case: TO-220AB Molded Plastic

• Terminals : Solderable per MIL-STD-750,Method 2026

• Marking : P75N75

Drain

Gate

Source

Maximum RATINGS and Thermal Characteristics (T

=25

C unless otherwise noted )

PA RA M E TE R

D r a i n- S o ur c e Vo l t a g e

G a t e - S o ur c e Vo l t a g e

C o nt i nuo us D r a i n C ur r e nt

P ul s e d D r a i n C ur r e nt

S ym b o l

D M

= 2 5

= 7 5

Li mi t

+20

350

105

6 2 .5

-5 5 to +1 5 0

U ni t s

M a xi m um P o w e r D i s s i p a t i o n

S T G

J C

J A

O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e

Avalanche Energy with Single Pulse

=47A, VDD=37.5V, L=0.3mH

660

1 .2

C /W

Junction-to-Case Thermal Resistance

Junction-to Ambient Thermal Resistance(PCB mounted)

Note: 1. Maximum DC current limited by the package

PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE

STAD-JUN.11.2007

PAGE . 1

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