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PJP3NA80_T0_00001

Description
Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJP3NA80_T0_00001 Overview

Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

PJP3NA80_T0_00001 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)173 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage800 V
Maximum drain current (ID)3 A
Maximum drain-source on-resistance4.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)12 A
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON

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PPJU3NA80
/ PJD3NA80 / PJP3NA80 / PJF3NA80
800V N-Channel MOSFET
Voltage
Features
R
DS(ON)
, V
GS
@10V,I
D
@1.5A<4.8Ω
High switching speed
Improved dv/dt capability
Low Gate Charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
TO-252AA
TO-251AA
ITO-220AB-F
TO-220AB
800 V
Current
3A
(Halogen Free)
Mechanical Data
Case : TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package
Terminals : Solderable per MIL-STD-750, Method 2026
TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams
TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams
TO-220AB Approx. Weight : 0.067 ounces, 2 grams
ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Avalanche Energy
(Note 1)
Power Dissipation
T
C
=25
o
C
Derate above 25
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
80
P
D
0.64
106
0.85
TO-251AA
TO-220AB
ITO-220AB-F
TO-252AA
UNITS
V
V
A
A
mJ
800
+30
3
12
173
39
0.31
-55~150
80
0.64
W
W/
o
C
o
Operating Junction and
Storage Temperature Range
Typical Thermal resistance
-
-
Junction to Case
Junction to Ambient
T
J
,T
STG
C
R
θJC
R
θJA
1.56
110
1.2
62.5
3.2
120
1.56
110
o
C/W
Limited only By Maximum Junction Temperature
January 15,2016-REV.01
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