PJF4NA60_T0_00001 datasheet, PDF

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PJF4NA60_T0_00001: DescriptionPower Field-Effect Transistor, 4A I(D), 600V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ITO-220AB, 3 PIN; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJF4NA60_T0_00001 Overview

Power Field-Effect Transistor, 4A I(D), 600V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ITO-220AB, 3 PIN

PJF4NA60_T0_00001 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	ITO-220AB, 3 PIN
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	217 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	4 A
Maximum drain-source on-resistance	2.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	16 A
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

PJF4NA60_T0_00001 Preview

PPJU4NA60

/ PJP4NA60 / PJF4NA60 / PJD4NA60

600V N-Channel MOSFET

Voltage

Features



DS(ON)

, V

@10V,I

@2A<2.4Ω



High switching speed



Improved dv/dt capability



Low Gate Charge



Low reverse transfer capacitance



Lead free in compliance with EU RoHS 2011/65/EU directive.



Green molding compound as per IEC61249 Std.

600 V

Current

(Halogen Free)

Mechanical Data



Case: TO-251AB ,TO-220AB, ITO-220AB, TO-252 Package



Terminals : Solderable per MIL-STD-750, Method 2026

TO-251AB Approx. Weight : 0.0104 ounces, 0.297grams

TO-220AB Approx. Weight : 0.065 ounces, 1.859 grams

ITO-220AB Approx. Weight : 0.056 ounces, 1.6 grams

TO-252 Approx. Weight : 0.0104 ounces, 0.297grams

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Single Pulse Avalanche Energy

(Note 1)

Power Dissipation

=25

Derate above 25

SYMBOL

STG

0.62

100

0.8

-55~150

TO-251AB

TO-220AB

ITO-220AB

TO-252

UNITS

600

+30

217

0.26

0.62

Operating Junction and

Storage Temperature Range

Thermal resistance

Junction to Case

Junction to Ambient

θJC

θJA

1.62

110

1.25

62.5

3.79

120

1.62

110

C/W



Limited only By Maximum Junction Temperature

March 10,2014-REV.00

Page 1

PPJU4NA60

/ PJP4NA60 / PJF4NA60 / PJD4NA60

Electrical Characteristics

=25 C unless otherwise noted)

PARAMETER

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Diode Forward Voltage

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Switching

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

Maximum Pulsed Drain-Source

Diode Forward Current

Reverse Recovery Time

Reverse Recovery Charge

trr

Qrr

---

=0V, I

=4A

/ dt=100A/us

(Note 2)

400

1.7

(on)

(off)

=300V, I

=4A,

=25Ω

(Note 2,3)

Ciss

Coss

Crss

=480V, I

=4A,

=10V

(Note 2,3)

=25V, V

=0V,

f=1.0MHZ

11.1

3.3

4.2

450

0.7

DSS

GS(th)

DS(on)

DSS

GSS

=0V,I

=250uA

=10V,I

=2A

=600V,V

=0V

=+30V,V

=0V

=4A,V

=0V

600

3.2

1.92

0.03

+10

0.86

2.4

1.0

+100

1.4

Ω

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

NOTES :

1. L=30mH, I

=3.7A, V

=50V, R

=25ohm, Starting T

=25

2. Pulse width<300us, Duty cycle<2%

3. Essentially independent of operating temperature typical characteristics.

March 10,2014-REV.00

Page 2

PPJU4NA60

/ PJP4NA60 / PJF4NA60 / PJD4NA60

TYPICAL CHARACTERISTIC CURVES

Fig.1 Output Characteristics

Fig.2 Transfer Characteristics

Fig.3 On-Resistance vs. Drain Current

Fig.4 On-Resistance vs. Junction Temperature

Fig.5 Capacitance vs. Drain-Source Voltage

Fig.6 Source-Drain Diode Forward Voltage

March 10,2014-REV.00

Page 3

PPJU4NA60

/ PJP4NA60 / PJF4NA60 / PJD4NA60

TYPICAL CHARACTERISTIC CURVES

Fig.7 Gate Charge

Fig.8 BV

DSS

vs. Junction Temperature

Fig.9

Threshold Voltage Variation with Temperature

Fig.10 Maximum Safe Operating Area

Fig.11 Maximum Safe Operating Area

Fig.12 Maximum Safe Operating Area

March 10,2014-REV.00

Page 4

PPJU4NA60

/ PJP4NA60 / PJF4NA60 / PJD4NA60

TYPICAL CHARACTERISTIC CURVES

Fig.13 PJU/PJD Normalized Transient Thermal Impedance vs. Pulse Width

Fig.14 PJP4NA60 Normalized Transient Thermal Impedance vs. Pulse Width

Fig.15 PJF4NA60 Normalized Transient Thermal Impedance vs. Pulse Width

March 10,2014-REV.00

Page 5

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