PJD50N10AL_L2_00001 datasheet, PDF

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PJD50N10AL_L2_00001: DescriptionDrain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 42A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 28.5mΩ @ 15A, 4.5V Maximum power dissipation (Ta=25°C): 83W Type: N-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size413KB，8 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJD50N10AL_L2_00001 Overview

Drain-source voltage (Vdss): 100V Continuous drain current (Id) (at 25°C): 42A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 28.5mΩ @ 15A, 4.5V Maximum power dissipation (Ta=25°C): 83W Type: N-channel

PJD50N10AL_L2_00001 Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	100V
Continuous drain current (Id) at 25°C	42A
Gate-source threshold voltage	2.5V @ 250uA
Drain-source on-resistance	28.5mΩ @ 15A,4.5V
Maximum power dissipation (Ta=25°C)	83W
type	N channel

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PPJD50N10AL

100V N-Channel Enhancement Mode MOSFET

Voltage

Features



100 V

Current

42 A

DS(ON) ,

@10V, ID@20A<25mΩ

DS(ON)

, V

@4.5V, ID@15A<28.5mΩ

Advanced Trench Process Technology

High density cell design for ultra low on-resistance

Lead free in compliance with EU RoHS 2011/65/EU

directive

TO-252AA



Green molding compound as per IEC61249 Std..

(Halogen Free)

Mechanical Data



Case : TO-252AA Package

Terminals : Solderable per MIL-STD-750, Method 2026

Approx. Weight : 0.0104 ounces, 0.297grams

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

Continuous Drain Current

Power Dissipation

(Note 1)

SYMBOL

=25

=100

=25

=100

=25

=70

=25

=70

STG

θJC

θJA

LIMIT

UNITS

100

+20

150

6.3

5.1

2.0

1.3

63.4

-55~150

1.5

62.5

Single Pulse Avalanche Energy

(Note 6)

Operating Junction and Storage Temperature Range

Typical Thermal Resistance

(Note 4,5)

Junction to Case

Junction to Ambient

C/W



Limited only By Maximum Junction Temperature

July 28,2016-REV.02

Page 1

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