PJD2NA60_L2_00001 datasheet, PDF

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PJD2NA60_L2_00001: DescriptionPower Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJD2NA60_L2_00001 Overview

Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2

PJD2NA60_L2_00001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	not_compliant
Avalanche Energy Efficiency Rating (Eas)	115 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	600 V
Maximum drain current (ID)	2 A
Maximum drain-source on-resistance	4.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	8 A
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

PJD2NA60_L2_00001 Preview

PPJU2NA60

/ PJD2NA60 / PJP2NA60 / PJF2NA60

600V N-Channel MOSFET

Voltage

Features



DS(ON)

, V

@10V,I

@1A<4.4Ω



High switching speed



Improved dv/dt capability



Low Gate Charge



Low reverse transfer capacitance



Lead free in compliance with EU RoHS 2011/65/EU directive.



Green molding compound as per IEC61249 Std.

TO-252AA

TO-251AA

ITO-220AB-F

TO-220AB

600 V

Current

(Halogen Free)

Mechanical Data



Case : TO-251AA,TO-252AA ,TO-220AB, ITO-220AB-F Package



Terminals : Solderable per MIL-STD-750, Method 2026



TO-251AA Approx. Weight : 0.0104 ounces, 0.297grams



TO-252AA Approx. Weight : 0.0104 ounces, 0.297grams



TO-220AB Approx. Weight : 0.067 ounces, 2 grams



ITO-220AB-F Approx. Weight : 0.068 ounces, 2 grams

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Single Pulse Avalanche Energy

(Note 1)

Power Dissipation

=25

Derate above 25 C

SYMBOL

TO-251AA

TO-220AB

ITO-220AB-F

TO-252AA

UNITS

600

+30

115

0.35

0.18

-55~150

0.27

W/ C

0.27

Operating Junction and

Storage Temperature Range

Typical Thermal resistance

Junction to Case

Junction to Ambient

STG

θJC

θJA

3.67

110

2.84

62.5

5.43

120

3.67

110

C/W



Limited only By Maximum Junction Temperature

January 14,2016-REV.01

Page 1

PPJU2NA60

/ PJD2NA60 / PJP2NA60 / PJF2NA60

Electrical Characteristics

=25 C unless otherwise noted)

PARAMETER

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Drain-Source On-State Resistance

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Diode Forward Voltage

Dynamic

(Note 4)

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

Maximum Pulsed Drain-Source

Diode Forward Current

Reverse Recovery Time

Reverse Recovery Charge

trr

Qrr

---

=0V, I

=2A

/ dt=100A/us

(Note 2)

SYMBOL

DSS

GS(th)

DS(on)

DSS

GSS

Ciss

Coss

Crss

(on)

(off)

TEST CONDITION

=0V,I

=250uA

=10V,I

=1A

=600V,V

=0V

=+30V,V

=0V

=2A,V

=0V

MIN.

600

TYP.

3.2

0.02

+10

0.86

5.7

1.8

257

39.7

0.92

MAX.

4.4

1.0

+100

1.4

UNITS

=480V, I

=2A,

=10V

(Note 2,3)

=25V, V

=0V,

f=1.0MHZ

=300V, I

=2A,

=25Ω

(Note 2,3)

357

NOTES :

1. L=30mH, I

=2.7A, V

=50V, R

=25ohm, Starting T

=25

2. Pulse width<300us, Duty cycle<2%

3. Essentially independent of operating temperature typical characteristics.

4. Guaranteed by design, not subject to production testing

January 14,2016-REV.01

Page 2

PPJU2NA60

/ PJD2NA60 / PJP2NA60 / PJF2NA60

TYPICAL CHARACTERISTIC CURVES

Fig.1 Output Characteristics

Fig.2 Transfer Characteristics

Fig.3 On-Resistance vs. Drain Current

Fig.4 On-Resistance vs. Junction Temperature

Fig.5 Capacitance vs. Drain-Source Voltage

Fig.6 Source-Drain Diode Forward Voltage

January 14,2016-REV.01

Page 3

PPJU2NA60

/ PJD2NA60 / PJP2NA60 / PJF2NA60

TYPICAL CHARACTERISTIC CURVES

Fig.7 Gate Charge

Fig.8 BV

DSS

vs. Junction Temperature

Fig.9

Threshold Voltage Variation with Temperature

Fig.10 Maximum Safe Operating Area

Fig.11 Maximum Safe Operating Area

Fig.12 Maximum Safe Operating Area

January 14,2016-REV.01

Page 4

PPJU2NA60

/ PJD2NA60 / PJP2NA60 / PJF2NA60

TYPICAL CHARACTERISTIC CURVES

Fig.13 PJU/PJD Normalized Transient Thermal Impedance vs. Pulse Width

Fig.14 PJP2NA60 Normalized Transient Thermal Impedance vs. Pulse Width

Fig.15 PJF2NA60 Normalized Transient Thermal Impedance vs. Pulse Width

January 14,2016-REV.01

Page 5

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