PJD13N10A_L2_00001 datasheet, PDF

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PJD13N10A_L2_00001: DescriptionPower Field-Effect Transistor; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJD13N10A_L2_00001 Overview

Power Field-Effect Transistor

PJD13N10A_L2_00001 Parametric

Parameter Name	Attribute value
Maker	PANJIT
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	compliant
Other features	ULTRA LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	6.1 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	2.9 A
Maximum drain-source on-resistance	0.115 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-252AA
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	52 A
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON

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PPJD13N10A

100V N-Channel Enhancement Mode MOSFET

Voltage

Features



100 V

Current

13A

DS(ON) ,

@10V, ID@6.5A<115mΩ

DS(ON)

, V

@4.5V, ID@4A<120mΩ

Advanced Trench Process Technology

High density cell design for ultra low on-resistance

Lead free in compliance with EU RoHS 2011/65/EU

directive

Green molding compound as per IEC61249 Std..

(Halogen Free)

TO-252AA

Mechanical Data



Case: TO-252AA Package

Terminals: Solderable per MIL-STD-750, Method 2026

Approx. Weight: 0.0104 ounces, 0.297 grams

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

Continuous Drain Current

Power Dissipation

(Note 1)

SYMBOL

LIMIT

UNITS

100

+20

2.9

2.3

2.0

1.3

6.1

-55~150

3.05

62.5

=25

=100 C

=25 C

=25

=100

=25

=70

=25

=70

STG

θJC

θJA

Single Pulse Avalanche Energy

(Note 6)

Operating Junction and Storage Temperature Range

Typical Thermal Resistance

(Note 4,5)

Junction to Case

Junction to Ambient

C/W



Limited only By Maximum Junction Temperature

July 26,2016-REV.01

Page 1

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