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PJC7476

Description
100V N-Channel Enhancement Mode MOSFET– ESD Protected
File Size297KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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100V N-Channel Enhancement Mode MOSFET– ESD Protected

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PPJC7476
100V N-Channel Enhancement Mode MOSFET– ESD Protected
Voltage
Features
100 V
Current
300mA
SOT-323
Unit: inch(mm)
R
DS(ON)
, V
GS
@10V, I
D
@300mA<6Ω
R
DS(ON)
, V
GS
@4.5V, I
D
@200mA<9Ω
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc
Lead free in compliance with EU RoHS 2011/65/EU
directive.
ESD Protected 2KV HBM
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-323 Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.00018 ounces, 0.005 grams
Marking: C76
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note 4)
o
SYMBOL
V
DS
V
GS
I
D
I
DM
T
a
=25
o
C
Derate above 25
o
C
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
mA
mA
mW
mW/
o
C
o
100
+20
300
800
350
2.8
-55~150
357
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
June 10,2015-REV.00
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