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PJA3430_R1_00001

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 400mΩ @ 500mA, 1.8V Maximum power dissipation (Ta =25°C): 1.25W Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size353KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJA3430_R1_00001 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 2A Gate-source threshold voltage: 1V @ 250uA Drain-source on-resistance: 400mΩ @ 500mA, 1.8V Maximum power dissipation (Ta =25°C): 1.25W Type: N-channel

PJA3430_R1_00001 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C2A
Gate-source threshold voltage1V @ 250uA
Drain-source on-resistance400mΩ @ 500mA,1.8V
Maximum power dissipation (Ta=25°C)1.25W
typeN channel

PJA3430_R1_00001 Preview

Download Datasheet
PPJA3430
20V N-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
Features
20 V
Current
2A
SOT-23
Unit: inch(mm)
R
DS(ON)
, V
GS
@4.5V, I
D
@2.0A<150mΩ
R
DS(ON)
, V
GS
@2.5V, I
D
@1.5A<215mΩ
R
DS(ON)
, V
GS
@1.8V, I
D
@0.5A<400mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in comply with EU RoHS 2011/65/EU directives.
Green molding compound as per IEC61249 Std.
(Halogen Free)
Mechanical Data
Case: SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0003 ounces, 0.0084 grams
Marking: A30
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note 4)
o
SYMBOL
V
DS
V
GS
I
D
I
DM
T
a
=25
o
C
Derate above 25
o
C
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
A
A
W
mW/
o
C
o
20
+8
2
8
1.25
10
-55~150
100
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
January 22,2015-REV.03
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