PJA3412_R2_00001 datasheet, PDF

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PJA3412_R2_00001: DescriptionPower Field-Effect Transistor, 4.1A I(D), 20V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJA3412_R2_00001 Overview

Power Field-Effect Transistor, 4.1A I(D), 20V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

PJA3412_R2_00001 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	GREEN, PLASTIC PACKAGE-3
Reach Compliance Code	compliant
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	4.1 A
Maximum drain-source on-resistance	0.056 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	16.4 A
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PPJA3412

20V N-Channel Enhancement Mode MOSFET

Voltage

Features



20 V

Current

4.1A

SOT-23

Unit: inch(mm)

DS(ON)

, V

@4.5V, I

@4.1A<56mΩ

DS(ON)

, V

@2.5V, I

@2.8A<68mΩ

DS(ON)

, V

@1.8V, I

@1.5A<95mΩ

Advanced Trench Process Technology

Specially Designed for Switch Load, PWM Application, etc.

Lead free in compliance with EU RoHS 2011/65/EU

directive.

Green molding compound as per IEC61249 Std.

(Halogen Free)



Mechanical Data



Case: SOT-23 Package

Terminals : Solderable per MIL-STD-750, Method 2026

Approx. Weight: 0.0003 ounces, 0.0084 grams

Marking: A12

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

=25

Derate above 25

SYMBOL

STG

θJA

LIMIT

UNITS

mW/

+12

4.1

16.4

1.25

-55~150

100

Operating Junction and Storage Temperature Range

Typical Thermal resistance

Junction to Ambient

(Note 3)

C/W

March 10,2014-REV.00

Page 1

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