PJ4N3KDW_13 datasheet, PDF - EEWORLD Datasheet

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PJ4N3KDW_13: Description30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected; File Size224KB，6 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected

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PJ4N3KDW

30V Dual N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES

• R

DS(ON)

, V

@2.5V,I

@1mA=7.0

• R

DS(ON)

, V

@4.0V,I

@10mA=5.0

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• The MOSFET elements are independent,eliminating interference

• Mounting cost and area can be cut in half

• Very Low Leakage Current In Off Condition

• Specially Designed for Battery Operated Systems,Solid-State Relays

Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• Low voltage drive (2.5V) makes this device ideal for portable

equipment

• ESD Protected 2KV HBM

• Lead free in comply with EU RoHS 2011/65/EU directives

• Green molding compound as per IEC61249 Std. . (Halogen Free)

MECHANICAL DATA

• Case: SOT-363 Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Weight: 0.0002 ounces, 0.006 grams

• Marking : 4N3

SOT-23

Absolute Maximum Ratings (T

=25

C )

P a r a m e te r

D ra i n-S o urc e Vo lta g e

Ga te - S o ur c e Vo lta g e e

C o nti nuo us D ra i n C ur r e nt

P uls e d D r a i n C ur re nt

(1 )

S ym b o l

=2 5

=7 5

Li mi t

+ 20

100

800

200

120

-5 5 to + 1 5 0

625

Uni ts

M a xi m um p o we r D i s s i p a ti o n

S TG

R

J A

Op e r a ti ng J unc ti o n a nd S to r a g e Te m p e r a tur e Ra ng e

J unc ti o n- to A m b i e nt The r m a l Re s i s ta nc e

( P C B m o unte d )

C /W

Note: 1. Maximum DC current limited by the package

2. Surface mounted on FR4 board, t < 5 sec

October 23,2013-REV.04

PAGE . 1

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