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PJ4812

Description
Power Mosfet Power MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size174KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

PJ4812 Overview

Power Mosfet Power MOSFET

Features

Product Name: Power Mosfet Power MOSFET


Product model: PJ4812


Product parameters:


Voltage Range: <=100


Channel: N


Drain-Source Voltage: VDSS: 30V


Gate-Source Voltage Maximum gate-source voltage: VGSS: 20+V


Drain Current: ID: 8A


Maximum Power Dissipation: PD: 2.4W


Static Drain-Source On-Resistance: Vgs=10V, Rdson (max.): 0.017Ω


Gate Charge: Vgs=10V, Qg: 14.2nC


Input Capacitance: Vds=25V, Ciss: 520pF


Reverse Transfer Capacitance: Vds=25V, Crss: 98pF



Package: SOIC-08



PJ4812 Parametric

Parameter NameAttribute value
MakerPANJIT
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)3.2 mJ
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.017 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)32 A
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

PJ4812 Preview

Download Datasheet
PJ4812
25V Dual N-Channel Enhancement Mode MOSFET
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@5.8A=15mΩ
• R
DS(ON)
, V
GS
@4.5V,I
DS
@4.7A=24mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Fully Characterized Avalanche Voltage and Current
• Pb free product : 99% Sn above can meet RoHS environment
substance directive request
SOIC-08
MECHANICALDATA
• Case: SOIC-08 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Marking : 4812
8
7
6
5
PIN Assignment
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
5. Drain 2
6. Drain 2
7. Drain 1
8. Drain 1
1
2
3
4
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo l t a g e
G a t e - S o ur c e Vo l t a g e
C o nt i nuo us D r a i n C ur r e nt
P ul s e d D r a i n C ur r e nt
1)
S ym b o l
V
D S
V
GS
I
D
I
D M
T
A
= 2 5
O
C
T
A
= 7 5
O
C
P
D
T
J
, T
S T G
E
AS
R
θ
J A
Li mi t
25
+20
5 .8
24
2 .0
1 .2
-5 5 to + 1 5 0
130
6 2 .5
U ni t s
V
V
A
A
W
O
M a xi m um P o w e r D i s s i p a t i o n
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
Avalanche Energy with Single Pulse
ID=23A, VDD=25V, L=0.5mH
Junction-to Ambient Thermal Resistance(PCB mounted)
2
C
mJ
O
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 10 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
STAD-JUL.19.2006
PAGE . 1
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