PJ2301_R1_00001 datasheet, PDF

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PJ2301_R1_00001: DescriptionDrain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 3.1A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 100mΩ @ 3.1A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 1.25W Type: P-channel; CategoryDiscrete semiconductor The transistor; File Size289KB，6 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 3.1A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 100mΩ @ 3.1A, 4.5V Maximum power consumption Dispersion (Ta=25°C): 1.25W Type: P-channel

PJ2301_R1_00001 Parametric

Parameter Name	Attribute value
Maker	PANJIT
Reach Compliance Code	compliant

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PPJ2301

20V P-Channel Enhancement Mode MOSFET

Voltage

Features



-20 V

Current

-3.1A

SOT-23

Unit: inch(mm)

DS(ON)

, V

@-4.5V, I

@-3.1A<100mΩ

DS(ON)

, V

@-2.5V, I

@-2.0A<135mΩ

DS(ON)

, V

@-1.8V, I

@-1.1A<190mΩ

Advanced Trench Process Technology

Specially Designed for Switch Load, PWM Application, etc.

Lead free in compliance with EU RoHS 2011/65/EU

directive.



Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data



Case: SOT-23 Package

Terminals: Solderable per MIL-STD-750, Method 2026

Maximum Ratings and Thermal Characteristics

=25 C unless otherwise noted)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

=25

Derate above 25

SYMBOL

STG

θJA

LIMIT

UNITS

mW/

-20

+12

-3.1

-12.4

1.25

-55~150

100

Operating Junction and Storage Temperature Range

Typical Thermal Resistance

Junction to Ambient

(Note 3)

C/W

November 9,2016-REV.03

Page 1

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