PDN6911S datasheet, PDF - EEWORLD Datasheet

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PDN6911S: DescriptionDrain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 2A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 190mΩ @ 2A, 10V Maximum power consumption Dispersion (Ta=25°C): 1.56W(Tc) Type: P-channel; CategoryDiscrete semiconductor MOS (field effect tube); File Size474KB，5 Pages; ManufacturerPotens; Websitehttp://www.potens-semi.com; Potens is a Taiwanese semiconductor company with an excellent R&D team. The core members of the team are all senior executives of APEC in Taiwan and have rich R&D experience. Potens is currently committed to the design and development of power semiconductors, especially the full range of MOSFETs, which is at a very high level in the industry.

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PDN6911S Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 2A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 190mΩ @ 2A, 10V Maximum power consumption Dispersion (Ta=25°C): 1.56W(Tc) Type: P-channel

PDN6911S Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	60V
Continuous drain current (Id) at 25°C	2A(Tc)
Gate-source threshold voltage	2.5V @ 250uA
Drain-source on-resistance	190mΩ @ 2A,10V
Maximum power dissipation (Ta=25°C)	1.56W(Tc)
type	P channel

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