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P6SMB110_R1_00001

Description
Trans Voltage Suppressor Diode, 89.2V V(RWM), Unidirectional,
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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P6SMB110_R1_00001 Overview

Trans Voltage Suppressor Diode, 89.2V V(RWM), Unidirectional,

P6SMB110_R1_00001 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionSMB, 2 PIN
Reach Compliance Code_compli
ECCN codeEAR99
Maximum breakdown voltage121 V
Minimum breakdown voltage99 V
Breakdown voltage nominal value110 V
Maximum clamping voltage158 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
GuidelineIEC-61000-4-2
Maximum repetitive peak reverse voltage89.2 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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P6SMB SERIES
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts
BREAK DOWN VOL
TAGE
6.8 to 400 Volt
FEATURES
• For surface mounted applications in order to optimize board space.
• Glass passivated junction
• Low inductance
• Plastic package has Underwriters Laboratory
Fammability Classification 94V-O
• High temperature soldering : 260°C /10 seconds at terminals
• Lead free in compliance with EU RoHS 2011/65/EU directives
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.155(3.94)
0.130(3.30)
0.083(2.11)
0.075(1.91)
0.185(4.70)
0.160(4.06)
0.012(0.305)
0.006(0.152)
0.096(2.44)
0.083(2.13)
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
MECHANICAL DATA
Case:JEDEC DO-214AA ,Molded plastic over passivated junction
Terminals: Solder plated,solderable per MIL-STD-750,Method 2026
Polarity : Color band denotes cathode end
Standard Packaging:12mm tape (EIA-481)
Weight: 0.003 ounce, 0.093 gram
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types
Ele ctrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
Rating
Peak Pulse Power Dissipation on 10/1000s waveform (Notes 1,2, Fig.1)
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) (Notes 2,3)
Peak Pulse Current on 10/1000s waveform (Notes 1) Fig.3
Typical Thermal Resistance Junction to Air (Notes 2)
Operating Junction and Storage Temperature Range
Symbol
P
PP
I
FSM
I
PPM
R
JA
T
J
,T
STG
Value
600
100
see Table 1
60
-55 to +150
Units
Watts
Amps
Amps
O
C/W
O
C
NOTES:
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig. 2.
2. Mounted on 5mm
2
(0.13mm thick) land areas.
3. Measured on 8.3ms, single hal f sine-wave or equivalent s quare wave, duty cycle = 4 pulse s per minute maximum.
4.
A transient suppressor is selected according to the working peak reverse voltage (V
R W M
), which should be equal to or greater than
the DC or continuous peak operating voltage level.
December 2,2013-REV.08
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