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P6SMB110C-AU_R1_100A1

Description
Trans Voltage Suppressor Diode, 600W, 89.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size192KB,7 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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P6SMB110C-AU_R1_100A1 Overview

Trans Voltage Suppressor Diode, 600W, 89.2V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN

P6SMB110C-AU_R1_100A1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionR-PDSO-C2
Reach Compliance Code_compli
ECCN codeEAR99
Maximum breakdown voltage121 V
Minimum breakdown voltage99 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityBIDIRECTIONAL
GuidelineAEC-Q101; TS 16949
Maximum repetitive peak reverse voltage89.2 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

P6SMB110C-AU_R1_100A1 Preview

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P6SMB-AU SERIES
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER 600 Watts
BREAK DOWN VOLTAGE
6.8 to 550 Volts
FEATURES
• For surface mounted applications in order to optimize board space.
• Low profile package
• Built-in strain relief
• Glass passivated junction
• Low inductance
• Typical I
D
less than 1.0µA above 10V
• Plastic package has Underwriters Laboratory
Fammability Classification 94V-O
• High temperature soldering : 260°C /10 seconds at terminals
• Acqire quality system certificate : TS16949
• Manufactured in accordance with AECQ101
• Lead free in comply with EU RoHS 2002/95/EC directives
0.155(3.94)
0.083(2.11)
0.075(1.91)
0.185(4.70)
0.160(4.06)
0.096(2.44)
0.050(1.27)
0.030(0.76)
0.220(5.59)
0.200(5.08)
0.130(3.30)
0.012(0.305)
0.006(0.152)
0.083(2.13)
MECHANICAL DATA
• Case:JEDEC DO-214AA ,Molded plastic over passivated junction
• Terminals: Solder plated,solderable per MIL-STD-750,Method 2026
• Polarity : Color band denotes cathode end
• Standard Packaging:12mm tape (EIA-481)
• Weight: 0.003 ounce, 0.093 gram
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Rating at 25°Cambient temperature unless otherwise specified. Resistive or inductive load, 60Hz.
For Capacitive load derate current by 20%.
Rating
Peak Pulse Power Dissipation on 10/1000uS waveform (Notes 1,2, Fig.1)
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) (Notes 2,3)
Peak Pulse Current on 10/1000us waveform(Note 1)Fig.3
Typical Thermal Resistance Junction to Air (Notes 2)
Operating Junction and Storage Temperature Range
Symbol
P
P P M
I
F S M
I
P P M
R
θ
J A
T
J
,T
S T G
Value
600
100
see Table 1
60
-55 to +150
Units
Watts
Amps
Amps
O
C/W
O
C
NOTES:
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig. 2.
2. Mounted on 5.0mm
2
(0.13mm thick) land areas.
3. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
March 14,2012-REV.05
PAGE . 1
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