P6KE Series
CREATEK Microelectronics
Power TVS
in
DO-15
Features
■
600Watts
peak pulse power (10/1000μs)
■
Class passivated junction
■
High accuracy, 5% tolerance
■
Uni and Bidirectional unit
■
Low clamping voltage
■
Low Leakage current
■
Very fast response time
Mechanical Data
■
Applications
■
Computers
■
Telecom
systems
■
Industrial equipments
■
Consumer
electronic applications
■
Other VCC bus and I/O interfaces
Case:
DO-15 (plastic package).
Lead free; RoHS compliant
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
■
■
Absolute Maximum Ratings
Parameter
Ratings at 25 °C, ambient temperature unless otherwise specified
Symbols
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
θJL
R
θJA
Value
600
See Next Table
5.0
100
3.5/5.0
20
75
Unit
W
A
W
A
V
℃/W
℃/W
℃
Peak power dissipation with a 10/1000us waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000us waveform
(1)
Steady state power dissipation
at T
L
=75℃, lead lengths 0.375" (9.5mm)
(2)
Peak forward surge current 8.3ms single half sine-wave
(3)
Maximum instantaneous forward voltage @ 50A for
(4)
unidirectional only
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
Operating junction and storage temperature range
-55 to +150
T
J
,T
STG
Notes:1.Non-repetitive current pulse, per Fig.3 and derated above T
A
=25℃ per Fig. 2
2. Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
3. Meas ed on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute
.
maximum
4.
.
F
=3.5
V for devices of V
(BR)
< 220V, and V
F
=5.0 Volt max. for devices of V
(BR)
>220V
Rev. 1.0, 23-May-2012
www.crea-tek.com
1
P6KE Series
CREATEK Microelectronics
Breakdown
voltage
(1)
V
(BR)
(Volts)
Min.
P6KE480A
P6KE480CA
P6KE510A
P6KE510CA
P6KE530A
P6KE530CA
P6KE540A
P6KE540CA
P6KE550A
P6KE550CA
Uni-Dir
Bi-Dir
Uni-Dir
Bi-Dir
Uni-Dir
Bi-Dir
Uni-Dir
Bi-Dir
Uni-Dir
Bi-Dir
456
456
485
485
503.5
503.5
513
513
522.5
522.5
Max.
504
504
535
535
556.5
556.5
567
567
577.5
577.5
Test
current
at
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
voltage
V
WM
(Volts)
408
408
434
434
450
450
459
459
467
467
Maximum
reverse
leakage
at V
WM
(3)
I
D
(uA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
peak pulse
current
(2)
I
PPM
(A)
0.9
0.9
0.9
0.9
0.8
0.8
0.8
0.8
0.8
0.8
Maximum
clamping
voltage
at I
PPM
V
C
(Volts)
658
658
698
698
725
725
740
740
760
760
Maximum
temperature
coefficient
of V
BR
(% /℃)
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
0.110
Part Number
Direction
Notes:1. V
(BR)
measured after I
T
applied for 300us, I
T
=square wave pulse or equivalent
2. Surge current waveform per Fig. 3 and derate per Fig. 2
3. For bidirectional types with V
WM
of 10 volts and less, the I
D
limit is doubled
4. All terms and symbols are consistent with ANSI/IEEE C62.35
5. For parts without A, the V
BR
is±10%
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
Fig.1 Peak Pulse Power Rating Curve
P
PPM
-Peak Pulse Power (kW)
100
Non-repetitive pulse
waveform shown in Fig.3
T
A
=25℃
Fig.2 Maximum Non-Repetitive Surge Current
Peak Pulse Power(P
PP
) or
Current(I
PPM
) Derating in
Percentage,%
100
75
10
50
25
0
1.0
0.1
0.1us
1.0us
10us
100us
1.0ms
10ms
0
25
50
75
100
125
150
175
200
Td- Pulse Width (sec)
T
A
-Ambient Temperature(℃)
Rev. 1.0, 23-May-2012
www.crea-tek.com
4
P6KE Series
CREATEK Microelectronics
Fig.3 Typical Forward Characteristics
150
Fig.4 Typ. Junction Capacitance Uni-Directional
6000
t
r
=10μs
I
PPM
-Peak Pulse Current, % I
RSM
100
C
J
-Junction Capacitance (pF)
T
J
=25℃
Pulse Width（td）
Is defined as the point
Where the peak current
Peak Value
Decays to 50% of I
PPM
I
PPM
Half Value
I
PPM
(I
PPM
/2)
T
J
=25℃
F=1.0MHz
Vsig=50mVp-p
1000
Measured at
Zero Bias
50
10/1000μs Waveform
as defined by R.E.A
100
Measured at
Stand-off
Voltage.V
WM
0
td
0
1.0
T
d
-Time(ms)
2.0
3.0
4.0
10
1.0
10
V
BR
-Breakdown Voltage (V)
100
200
Fig.5 Steady State Power Derating Curve
5.0
Fig.6 Max. Non-Repetitive Forward Surge
Currer Uni-Directional Only
200
PM
(AV)
Steady State Power
Dissipation(W)）
I
FSM
—Peak
Forward Surge
Current (A)
60HZ Resistive or
Inductive Load
1.6×1.6×0.40”
(40×40×1mm)
Copper Heat Sinks
L = 0.375” (9.5mm)
Lead Lengths
Uni-Directional Only
100
TJ=TJmax
8.3ms Single Half Sine-Wave
50
(JEDEC Method)
3.75
2.5
1.25
0
10
0
25
50
75
100
125
150 175
200
1
5
10
50
100
T
L
-Lead Temperature(℃)
Number of Cycles at 60HZ
Fig.7 Typical Reverse Leakage Characteristics
1000
Fig.8 Typ. Transient Thermal Impedance
100
100
10
1
0.1
Measured at Devices
Stand-off Voltage.VWM
T
A
=25℃
Transient Thermal Impedance
(℃W)
400
500
I
D
-Instantaneous Reverse
Leakage Current(uA)
10
1
0.01
0.001
0.1
0
100
200
300
0.001
0.001
0.00
0.0
10
t
p
- Pulse Duration(sec)
1
0
V
(BR)
-Breakdown Voltage(V)
Rev. 1.0, 23-May-2012
www.crea-tek.com
5
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
