EEWORLDEEWORLDEEWORLD

Part Number

Search

P6KE56CA

Description
反向关断电压(典型值):47.8V 击穿电压(最小值):53.2V 极性:Bidirectional 箝位电压:77V 峰值脉冲电流(10/1000us):7.8A TVS 56V,Ppp=600W 双向
CategoryDiscrete semiconductor    TVS diode   
File Size979KB,7 Pages
ManufacturerCREATEK Microelectronics Co.,Ltd
Websitehttp://www.crea-tek.com/
CREATEK Microelectronics was founded in the United States and entered China in 2009 and reorganized with Chinese companies. It is mainly engaged in the design, manufacture and sales of IGBT, MOSFET, FRD, protection devices, planar magnets, and provides related application solutions. The headquarters is located in China, with a research and development center in San Francisco, a North American sales center, and sales offices in Shenzhen, Shanghai, Suzhou, Taiwan, China, and Singapore.
Download Datasheet Online Shopping Parametric View All

P6KE56CA Online Shopping

Suppliers Part Number Price MOQ In stock  
P6KE56CA - - View Buy Now

P6KE56CA Overview

反向关断电压(典型值):47.8V 击穿电压(最小值):53.2V 极性:Bidirectional 箝位电压:77V 峰值脉冲电流(10/1000us):7.8A TVS 56V,Ppp=600W 双向

P6KE56CA Parametric

Parameter NameAttribute value
Reverse shutdown voltage (typ)47.8V
Breakdown voltage (minimum value)53.2V
polarityBidirectional
clamping voltage77V
Peak pulse current (10/1000us)7.8A

P6KE56CA Preview

Download Datasheet
P6KE Series
CREATEK Microelectronics
Power TVS
in
DO-15
Features
600Watts
peak pulse power (10/1000μs)
Class passivated junction
High accuracy, 5% tolerance
Uni and Bidirectional unit
Low clamping voltage
Low Leakage current
Very fast response time
Mechanical Data
Applications
Computers
Telecom
systems
Industrial equipments
Consumer
electronic applications
Other VCC bus and I/O interfaces
Case:
DO-15 (plastic package).
Lead free; RoHS compliant
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Absolute Maximum Ratings
Parameter
Ratings at 25 °C, ambient temperature unless otherwise specified
Symbols
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
θJL
R
θJA
Value
600
See Next Table
5.0
100
3.5/5.0
20
75
Unit
W
A
W
A
V
℃/W
℃/W
Peak power dissipation with a 10/1000us waveform
(1)
(Fig. 1)
Peak pulse current with a 10/1000us waveform
(1)
Steady state power dissipation
at T
L
=75℃, lead lengths 0.375" (9.5mm)
(2)
Peak forward surge current 8.3ms single half sine-wave
(3)
Maximum instantaneous forward voltage @ 50A for
(4)
unidirectional only
Typical thermal resistance junction-to-lead
Typical thermal resistance junction-to-ambient
Operating junction and storage temperature range
-55 to +150
T
J
,T
STG
Notes:1.Non-repetitive current pulse, per Fig.3 and derated above T
A
=25℃ per Fig. 2
2. Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
3. Meas ed on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute
.
maximum
4.
.
F
=3.5
V for devices of V
(BR)
< 220V, and V
F
=5.0 Volt max. for devices of V
(BR)
>220V
Rev. 1.0, 23-May-2012
www.crea-tek.com
1
Leakage current and withstand voltage test of low voltage battery products
Leakage current and withstand voltage test of low voltage battery productsBattery-powered products like wristbands, mobile phones, and headphones. Charging is DC5V. How to use leakage current tester a...
QWE4562009 Test/Measurement
MSP430 Registers
MSP430 Registers: IIC UCBxCTL0 UCBxCTL1 Control Register UCBxBR0 UCB0xBR1 Bit Rate Control Register UCBxI2CIE Interrupt Enable Register UCBxSTAT Status RegisterUCBxRXBUF Receive Buffer Register UCBxTX...
Jacktang Microcontroller MCU
BMS insulation detection circuit
BMS insulation detection circuitWhen the insulation resistance between the total positive terminal PACK+of the battery pack and the vehicle ground decreases in proportion to the insulation resistance ...
QWE4562009 Discrete Device
i.MX6ULL Embedded Linux Development 1-Preliminary Study on Uboot Transplantation
[i=s]This post was last edited by DDZZ669 on 2021-7-27 23:05[/i]This series of tutorials uses the ARM development board of the i.MX6ULL processor as the experimental basis to learn and record various ...
DDZZ669 ARM Technology
【Synopsys IP Resources】 Comprehensive IP Solutions to Help HPC Chip Development
In the field of chip design, using silicon-proven IP is a proven practice.事实上,这种既能节省时间又能提高质量的复杂片上系统(SoC)开发方法的使用范围越来越广,普及率越来越高。特别是在高速增长的动态细分市场中,基于IP的设计已被证明是一种可以显著缩短开发时间、确保输出更高质量的产品、以及提高工程人员工作效率的手段,便于工程...
arui1999 Integrated technical exchanges
Arrow Interview: RoHS's green and environmentally friendly road has not yet reached its end
[i=s]This post was last edited by jameswangsynnex on 2015-3-3 20:00[/i]...
rain Mobile and portable

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号