P6KE12A datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> P6KE12A

P6KE12A: Descriptiontransient voltage suppression diode; CategoryDiscrete semiconductor diode; File Size179KB，5 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

Parametric View All

P6KE12A Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	P6KE12A	-	-	View	Buy Now

P6KE12A Overview

transient voltage suppression diode

600 W, 单向, 硅, 瞬态抑制二极管, DO-15

Features

Product Name: Transient Voltage Suppressor Diode

Product model: P6KE12A

product features:

Plastic package has Underwriters Laboratory Flammability Classification 94V-0

Exceeds environmental standards of MIL-STD-19500

600W surge capability at 10 x 100us waveform,duty cycle: 0.01%

Excellent clamping capability

Low zener impedance

Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirectional and 5.0 ns for bidirectional

Typical IR less than 1uA above 10V

High temperature soldering guaranteed:2500C/ 10 seconds/.375",(9.5mm) lead length / 5lbs.,(2.3kg) tension

Mechanical data:

Cases: Molded plastic

Epoxy:UL94V-0 rate flame retardant

Lead :Axial leads, solderable per MIL- STD-202, Method 208

Polarity: Color band denotes cathode except Bipolar

Weight: 0.34 gram

Maximum Ratings and Electrical Characteristics:

Rating at 25℃ ambient temperature unless otherwise specified.

product data:

Peak Power Dissipation at TA=25℃, TP=1ms PPK Forward power consumption: Minimun 600W

Steady State Power Dissipation at TL=25℃ PD stable power consumption: 2.0W

Peak Forward Surge Current IFSM Forward pulse current: 100A

Maximum Instaneous Forward Voltage at 50A for Unidirectional Only VF Forward Voltage Drop: 3.5 /5.0V

Operating and Storage Temperature Range Tj. Tstg Operating Junction Temperature: -55 to +175℃

Nominal Voltage: 12V

Breakdown Voltage V(BR) Breakdown Voltage: Min: 11.4V Max: 12.6V

Test Current at IT Test current: 1.0mA

Stand-Off Voltage Vwm Stand-Off Voltage: 10.2V

Max Reverse Leakage at Vwm ID Maximum reverse leakage current: 5.0uA

Max Peak Pulse Current IPPM Maximum peak pulse current: 37A

Max Clamping Voltage at IPPM VC 最大箝位电压：16.7V

Maximum Temperature Coefficient of VBR: 0.078%/℃

Package: DO-15

P6KE12A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	O-PALF-W2
Reach Compliance Code	compli
Other features	EXCELLENT CLAMPING CAPABILITY, Bulk; 500
Maximum breakdown voltage	12.6 V
Minimum breakdown voltage	11.4 V
Breakdown voltage nominal value	12 V
Shell connection	ISOLATED
Maximum clamping voltage	16.7 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
Maximum forward voltage (VF)	3.5 V
JEDEC-95 code	DO-204AC
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	5 W
Maximum repetitive peak reverse voltage	10.2 V
Maximum reverse current	5 µA
Reverse test voltage	10.2 V
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

P6KE12A Preview

Download Datasheet

View All

P6KE SERIES

瞬变电压抑制二极管

Transient Voltage Suppressor Diodes

■特征

Features

■外½尺寸和印记

Outline Dimensions and Mark

●

600W

●

6.8V-540V

1.0(25.4)

MIN

DO-204AC(DO-15)

.300(7.60)

.230(5.80

1.0(25.4)

MIN

.034(0.86)

.028(0.71)

DIA

Dimensions in inches and (millimeters)

■用途 Applications

●箝½电压用 Clamping

Voltage

.140(3.60)

.104(2.60)

DIA

■极限值（绝对最大额定值）

Limiting Values (Absolute Maximum Rating)

参数名称

Item

最大损耗功率

Peak power dissipation

最大脉冲电流

Peak pulse current

功率损耗

Power dissipation

最大正向浪涌电流

Peak forward surge current

工½结温和存储温度范围

Operating junction and

temperature range

符号

Symbol

PPPM

IPPM

IFSM

storage TJ,TSTG

单½

Unit

℃

条件

Conditions

在10/1000us 波½下测试

with a 10/1000us waveform

在10/1000us 波½下测试

with a 10/1000us waveform

无限散热片@

TL=75℃

on infinite heat sink at TL=75℃

8.3ms正弦半波，仅单向型

8.3 ms single half sine-wave unidirectional only

最大值

Max

600

见下面表格

See Next Table

100

-55 to +175

■电特性（T

a=25

℃

除非另有规定）

Electrical Characteristics（Ta=25

℃

Unless otherwise specified）

参数名称

Item

符号

Symbol

单½

Unit

条件

Conditions

最大值

Max

3.5/5.0

最大瞬间正向电压（1）

Maximum instantaneous forward

Voltage（1）

在25A下测试，仅单向型

at 25A for unidirectional only

结到引线

junction to lead

结到环境

junction to ambient

典型热阻

Thermal resistance

θJL

θJA

℃/W

备注：Notes:

1. VF=3.5V适用于P6KE220(A)及其以下型号；VF=5.0V适用于P6KE250(A)及其以上型号

VF = 3.5 V for P6KE220(A) and below; VF = 5.0 V for P6KE250(A) and above

Document Number 0235

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技½股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Recommended Resources

3V-5V level conversion circuit diagram

TDA1904 power amplifier circuit diagram

High quality stereo HI-FI combo amplifier 05

Simple three-phase brushless stepper motor drive circuit

TDA1551Q power amplifier circuit diagram

Weak pulse signal amplifier circuit

Analysis of the interface technology circuit of the sensor used in ESP: ESP is the abbreviation of Electronic Stability Program, which is translated into Chinese as "electronic stability program". It is a general term for systems or programs that are designed to improve t...; Aguilera Analogue and Mixed Signal

5G infrastructure opens new integration frontiers inside RF chips: The advent of massive MIMO has created new RF challenges for base station hardware, and new wireless technologies are facilitating the development of 5G wireless technologies. As a result, 5G infrastr...; 朗锐智科 RF/Wirelessly

Basic Op Amp Configuration: 1.1 Op Amp Basics　　Step 1: Connecting DC Power　　Op amps must always be supplied with DC power, so it is best to configure these connections before adding any other circuit components. Figure 1 shows o...; Aguilera Analogue and Mixed Signal

EEWORLD University ----PI new product: LinkSwitch-TNZ: PI 新品：LinkSwitch-TNZ：https://training.eeworld.com.cn/course/27365...; hi5 Power technology

I need help with the schematic diagram or other information of USR-GM3P, or a communication module similar to it.: ...; 51、32小鬼 PCB Design

[FreeRTOS check-in second stop is open] Stack - the key to task switching, closing time is August 17: Activity Overview: Click here to view (including activity encouragement and activity learning content)Check-in start and end time for this site: August 15th - August 17th (3 days) Check-in tasks: 1. R...; nmg MCU

Popular Components