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P4KE11

Description
transient voltage suppression diode
CategoryDiscrete semiconductor    diode   
File Size2MB,3 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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P4KE11 Overview

transient voltage suppression diode

Features

Product Name: Transient Voltage Suppressor Diode


Product model: P4KE11


product features:


Plastic package has Underwriters Laboratory Flammability Classification 94V-0


400W surge capability at 10×100us waveform, duty cycle: 0.01%


Excellent clamping capability


Low zener impedance


Fast response time: Typically less than 1.0ps from 0 volts to VBR for unidirection and 5.0ns for bidirectional


Typical IR less 1uA above 10V


High temperature soldering guaranteed: 250℃/10 seconds/ .375", (9.5mm) Lead length/ 5lbs,.(2.3kg) tension.



Mechanical data:


Cases: Molded plastic


Epoxy:UL94V-0 rate flame retardant


Lead :Axial leads, solderable per MIL- STD-202, Method 208


Polarity: Color band denotes cathode except Bipolar


Weight:0.012 ounce, 0.3 gram



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.



product data:


Peak Power Dissipation at TA=25℃, TP=4ms PPK Forward power consumption: Minimun 400W


Steady State Power Dissipation at TL=75℃ PD stable power consumption: 1.0W


Peak Forward Surge Current IFSM Forward pulse current: 40A


Maximum Instaneous Forward Voltage at 25A for Unidirectional Only VF Forward Voltage Drop: 3.5 /6.5V


Operating and Storage Temperature Range Tj. Tstg Operating Junction Temperature: -55 to +175℃


Nominal Voltage: 11V


Breakdown Voltage V(BR) Breakdown Voltage: Min: 9.90V Max: 12.1V


Test Current at IT Test current: 1.0mA


Stand-Off Voltage Vwm Stand-Off Voltage: 8.92V


Max Reverse Leakage at Vwm ID Maximum reverse leakage current: 5.0uA


Max Peak Pulse Current IPPM Maximum peak pulse current: 26A


Max Clamping Voltage at IPPM VC 最大箝位电压:16.2V


Maximum Temperature Coefficient of VBR: 0.075%/℃



Package: DO-41


P4KE11 Parametric

Parameter NameAttribute value
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codecompliant
Breakdown voltage nominal value11 V
Maximum clamping voltage16.2 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage8.92 V
surface mountNO

P4KE11 Preview

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