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MUR1060F

Description
Corresponding specification model model MUR1060FCT
CategoryDiscrete semiconductor    Fast recovery diode   
File Size323KB,3 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
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Corresponding specification model model MUR1060FCT

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MUR1060CT&MUR1060FCT
MUR1060CT&MUR1060FCT
10.0AMPS. GLASS PASSIVATED FAST RECTIFIERS
FEATURE
.Low
forward voltage drop
.High current capability
.High reliability
.High surge current capability
.Epitaxial construction
.High
temperature soldering guaranteed
260°C /10seconds, 0.25"(6.35mm)from case.
TO-220AB
MUR1060CT
ITO-220AB
MUR1060FCT
MECHANICAL DATA
.Case: Molded with UL-94 Class V-0 recognized
Flame Retardant Epoxy
.Mounting position: any
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS
(T
C
=25℃ unless otherwise noted)
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current
at T
C
=100°C
superimposed on rated load (JEDEC method)
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operation Junction Temperature and Storage Temperature
Maximum Mounting torque, M3 or 6-32 srew
Per Leg
Total device
Per Leg
Symbol
MUR1060CT&MUR1060FCT
600
420
600
5.0
10.0
70.0
50
80
-55 to +150
1.1N•m (10 lbf•in)
Units
V
V
V
A
A
nS
pF
°C
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
t
rr
C
J
T
J
,
T
STG
Peak Forward Surge Current 8.3ms single half sine-wave
ELECTRICAL CHARACTERISTICS
(T
C
=25℃ unless otherwise noted)
Parameter
Maximum Forward Voltage (Per
Leg)
Maximum DC Reverse Current
at rated DC blocking voltage
at 5.0A DC
@T
A
=25°C
@T
A
=125°C
Symbol
Typ
1.4
----
----
MUR1060CT
2.5
Max
1.7
10.0
500.0
MUR1060FCT
3.5
Units
V
μA
V
F
I
R
Symbol
THERMAL CHARACTERISTICS
(T
C
=25℃ unless otherwise noted)
Parameter
Typical Thermal Resistance (Note 3)
Units
°C /W
R
(JC)
Notes:
1. Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance From Junction to Case
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