MUR1060CT datasheet, PDF - EEWORLD Datasheet

MUR1060CT: DescriptionUltra-Fast Recovery Rectifier Diodes Ultra-Fast Recovery Rectifier Diodes; CategoryDiscrete semiconductor; File Size100KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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MUR1060CT Overview

Ultra-Fast Recovery Rectifier Diodes Ultra-Fast Recovery Rectifier Diodes

Features

Product Name: Ultra-Fast Recovery Rectifier Diodes

Product model: MUR1060CT

product features:

Io: 16.0A

VRRM: 100V-600V

Glass passivated chip

High forward surge current capability

High surge forward current capability

use:

Fast rectifier

High speed switching

product data:

Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 600V

Average Forward Current IF(AV) Average forward current: 10A

Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 55A

Current Squared Time I^2*t The integral value of the square of the forward surge current and the current surge duration: 12 A^2*S

Junction Temperature TJ Junction temperature: -55 to +150 ℃

Storage Temperature TSTG storage temperature: -55 to +175 ℃

Peak Forward Voltage (IFM=5.0A) VFM Forward peak voltage: 1.7V

Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 10μA

IRRM2 (Ta=125℃) Reverse peak current: 500μA

Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 50ns

Thermal Resistance (Typical) RθJ-C Thermal Resistance (Typical): 2.0 ℃/W

Package: TO-220AB

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	R-PSFM-T3
Reach Compliance Code	unknown
Is Samacsys	N
Other features	FREEWHEELING DIODE
application	ULTRA FAST RECOVERY
Shell connection	CATHODE
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.5 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Maximum non-repetitive peak forward current	75 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	5 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.05 µs
surface mount	NO
Terminal surface	Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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