MS110_R1_00001 datasheet, PDF - EEWORLD Datasheet

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MS110_R1_00001: DescriptionRectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MS110_R1_00001 Overview

Rectifier Diode, Schottky, 1 Element, 1A, 100V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

MS110_R1_00001 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	R-PDSO-C2
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	LOW POWER LOSS
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-214AC
JESD-30 code	R-PDSO-C2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	100 V
surface mount	YES
technology	SCHOTTKY
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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MS14~MS120

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE

40 to 200 Volts

CURRENT

1 Amperes

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

• For surface mounted applications in order to optimize board space

• Metal to silicon rectifier. majority carrier conduction

• Low power loss,high efficiency

• High surge capacity

• High current capacity ,low V

• Lead free in comply with EU RoHS

directives

• Green molding compound as per IEC61249 Std. . (Halogen Free)

0.114(2.90)

0.098(2.50)

0.181(4.60)

0.157(4.00)

012(0

305)

006(0.152)

0.008(0.203)

0.002(0.051)

0.208(5.28)

0.188(4.80)

MECHANICAL DATA

•

Case: JEDEC DO-214AC molded plastic

Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Standard packaging: 12mm tape (EIA-481)

Weight: 0.0023 ounce, 0.0679 gram

0.060(1.52)

0.030(0.76)

Cathode

Anode

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive

load.

PA RA ME TE R

Ma xi mum Re c urre nt P e a k Re ve rs e Vo lta g e

Ma xi mum RM S Vo lta g e

Ma xi mum D C B lo c k i ng Vo lta g e

Ma xi mum A ve ra g e F o rwa rd C urre nt (S e e F i g ure 1 )

P e a k F o r wa rd S urg e C urre nt : 8 .3 ms s i ng le ha lf s i ne -wa ve

s up e ri m p o s e d o n ra te d lo a d (J E D E C m e tho d )

Ma xi mum F o rwa rd Vo lta g e a t 1 A ( No te s 1 )

=2 5

S YMB OL

MS 1 4 MS 1 4 A MS 1 5 MS 1 6 M S 1 8 MS 1 9 MS 11 0 M S 11 5 MS 1 2 0

UNITS

RRM

RMS

F (AV )

F S M

0 .7

0 .7 4

=1 2 5

θJ

S TG

-5 5 to

+1 50

3 1 .5

0.062(1.60)

0.047(1.20)

100

150

105

150

200

140

200

0 .8

0.9

μA

Ma xi mum D C Re ve rs e C ur re nt a t Ra te d D C B lo c k i ng

Vo lta g e

-6 5 to + 1 7 5

Typ i c a l The rm a l Re s i s ta nc e (No te s 2 )

Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e

C / W

NOTES:

1.Pulse Test with PW =300µsec, 1% Duty Cycle.

2.Mounted on P.C. Board with 5mm

(.013mm thick) copper pad areas.

November 8,2012-REV.05

PAGE . 1

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