MMSZ5250C datasheet, PDF - EEWORLD Datasheet

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MMSZ5250C: DescriptionZener diode; CategoryDiscrete semiconductor; File Size910KB，2 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

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MMSZ5250C Overview

Zener diode

Features

Product Name: Zener Diode

Product model: MMSZ5250C

product features:

Planar Die Construction

Ultra-Small Surface Mount Package

General purpose, Medium Current

Ideally Suited for Automated Assembly Processes

Product parameters:

Pd dissipated power: 350mW

Vz stable voltage: Nom=20V Min=19.60V Max=20.40V

Zzt breakdown impedance: 25Ω

Zzk breakdown impedance: 600Ω

IR reverse current: 0.1uA

Vf forward voltage drop: 0.9V

Package: SOD-123

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOD-123 Plastic-Encapsulate Diode

MMSZ5221C-MMSZ5259C

ZENER DIODE

FEATURES

• Planar Die Construction

• Ultra-Small Surface Mount Package

• General purpose, Medium Current

• Ideally Suited for Automated Assembly Processes

SOD-123

Maximum Ratings

=25℃ unless otherwise specified)

Symbol

@ I

= 10mA

θJA

STG

Value

0.9

350

357

-65

+150

Characteristic

Forward Voltage (Note 2)

Power Dissipation(Note 1)

Thermal Resistance, Junction to Ambient Air

Operating and Storage Temperature Range

Unit

℃/W

℃

Notes:1. Device mounted on ceramic PCB;

5.0mm

7.0

mm with pad areas

mm .

2. Tested with pulses, Tp≤1.0ms.

B,Jan,2012

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