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MMDT3906-R2-00001

Description
MMDT3906-R2-00001
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMDT3906-R2-00001

MMDT3906-R2-00001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codeunknown

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MMDT3906
DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
• PNP epitaxial silicon, planar design
• Collector-emitter voltage V
CE
= -40V
• Collector current I
C
= -200mA
0.054(1.35)
0.045(1.15)
0.030(0.75)
0.021(0.55)
0.056(1.40)
40 Volts
POWER
200 mWatts
SOT-363
0.087(2.20)
0.074(1.90)
Unit
inch(mm)
0.010(0.25)
MECHANICAL DATA
• Case: SOT-363, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.006 gram
• Marking: S2A
0.004(0.10)
0.000(0.00)
0.010(0.25)
0.003(0.08)
0.047(1.20)
0.012(0.30)
0.005(0.15)
6
5
4
1
2
3
Fig.53
ABSOLUTE RATINGS
PARAMETER
C ollector - Emi tter Voltage
C ollector - Base Voltage
Emi tter - Base Voltage
C ollector C urrent - C onti nuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-40
-40
-5.0
-200
Uni ts
V
V
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
P
TOT
R
θ
JA
T
J
T
STG
Value
200
625
-55 to 150
-55 to 150
Units
mW
O
C/W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
STAD-MAY.06.2006
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