MMDT3904TB6T/R7 datasheet, PDF

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MMDT3904TB6T/R7: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6; CategoryDiscrete semiconductor The transistor; File Size125KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMDT3904TB6T/R7 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6

MMDT3904TB6T/R7 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	SMALL OUTLINE, R-PDSO-F6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-F6
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	250 ns
Maximum opening time (tons)	70 ns

MMDT3904TB6T/R7 Preview

MMDT3904TB6

DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE

FEATURES

• NPN epitaxial silicon, planar design

• Collector-emitter voltage VCE = 40V

• Collector current IC = 200mA

• In compliance with EU RoHS 2002/95/EC directives

40 Volts

POWER

225 mWatts

SOT-563

MECHANICAL DATA

• Case: SOT-563, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.003 gram

• Marking: TX

ABSOLUTE RATINGS

Parameter

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

Collector Current - Continuous

Symbol

CEO

CBO

EBO

Value

6.0

200

Units

THERMAL CHARACTERISTICS

Parameter

Max Power Dissipation (Note 1)

Thermal Resistance , Junction to Ambient

Junction Temperature

Storage Temperature

Symbol

TOT

STG

Value

225

625

-55 to 150

Units

C/W

Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.

STAD-MAR.13.2008

PAGE . 1

MMDT3904TB6

ELECTRICAL CHARACTERISTICS

P a ra me te r

C o lle c to r - E mi tte r B re a k d o wn Vo lta g e

C o lle c to r - B a s e B re a k d o wn Vo lta g e

E mi tte r - B a s e B re a k d o wn Vo lta g e

B a s e C ut o f f C ur r e nt

C o l l e c t o r C ut o f f C ur r e nt

S ym b o l

(B R)C E O

(B R)C B O

(B R)E B O

Te s t C o n d i t i o n

=1 .0 mA , I

= 1 0 uA , I

= 0

= 1 0 uA , I

= 0

=3 0 V, V

=3 .0 V

=3 0 V, V

=3 .0 V

=0 .1 mA , V

=1 .0 V

=1 .0 mA , V

=1 .0 V

=1 0 mA , V

=1 .0 V

=5 0 mA , V

=1 .0 V

=1 0 0 mA , V

=1 .0 V

M i n.

6 .0

100

0 .6 5

Ty p .

M a x.

300

0 .2

0 .3

0 .8 5

0 .9 5

4 .0

8 .0

200

U ni t s

CEX

D C C ur r e nt G a i n ( N o t e 2 )

C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e

(No te 2 )

B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e

(No te 2 )

C o l l e c t o r - B a s e C a p a c i t a nc e

E m i t t e r - B a s e C a p a c i t a nc e

D e l a y Ti m e

R i s e Ti m e

S t o r a g e Ti m e

F a l l Ti m e

C E ( S AT)

B E ( S AT)

CBO

EBO

=1 0 mA , I

=1 .0 mA

=5 0 mA , I

=5 .0 mA

=1 0 mA , I

=1 .0 mA

=5 0 mA , I

=5 .0 mA

=5 V, I

=0 , f=1 MHz

=0 .5 V, I

=0 , f=1 MHz

=3 V,V

=-0 .5 V,

=1 0 mA ,I

=1 .0 mA

=3 V,V

=-0 .5 V,

=1 0 mA ,I

=1 .0 mA

=3 V,I

=1 0 mA

1 =I

2 =1 .0 mA

=3 V,I

=1 0 mA

1 =I

2 =1 .0 mA

Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+3V

275

+10.9V

-0 .5 V

< 1ns

300 ns

D uty C ycle ~ 2.0%

10K

C S * < 4pF

D elay and R ise Tim e Equivalent Test C ircuit

+3V

275

+10.9V

-9.1V

< 1ns

10K

1N916

10 to 500us

Duty Cycle ~ 2.0%

C S * < 4pF

Storage and Fall Tim e Equivalent Test Circuit

STAD-MAR.13.2008

PAGE . 2

MMDT3904TB6

ELECTRICAL CHARACTERISTICS CURVE

300

250

200

=150 C

1.400

=1V

1.200

1.000

=100 C

(V)

0.800

0.600

0.400

=25

=100

150

100

0.01

0.1

=25

0.200

100

1000

0.000

0.01

=150

=1V

0.1

100

1000

Collector Current, I

(mA)

Collector Current, I

(mA)

Fig. 2. Typical VBE vs. Collector Current

Fig. 1. Typical h

vs. Collector Current

1.000

1.0

=25

/ I

=10

(sat)(mV)

=150

(sat) (V)

=100 C

0.100

=25

=150

/ I

=10

0.010

0.01

0.1

100

1000

0.1

0.01

0.1

1.0

100

Collector Current, I

(mA)

Collector Current, I

(mA)

Fig. 3. Typical V

CE (sat)

vs. Collector Current

Fig. 4. Typical V

BE(sat)

vs Collector Current

(EB)

Capacitance (pF)

=150 C

(CB)

0.1

100

Reverse Voltage, V

(V)

Fig. 5. Typical Capacitances vs. Reverse Voltage

STAD-MAR.13.2008

PAGE . 3

MMDT3904TB6

MOUNTING PAD LAYOUT

ORDER INFORMATION

• Packing information

T/R - 4K per 7" plastic Reel

T/R - 10K per 13" plastic Reel

LEGAL STATEMENT

The information presented in this document is believed to be accurate and reliable. The specifications and information herein

are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit

does not convey any license under its patent rights or rights of others.

STAD-MAR.13.2008

PAGE . 4

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