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MMDT2907A

Description
DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size96KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMDT2907A Overview

DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR

MMDT2907A Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage60 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Maximum off time (toff)100 ns
Maximum opening time (tons)45 ns

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MMDT2907A
DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
• PNP epitaxial silicon, planar design
• Collector-emitter voltage V
CE
= -60V
0.087(2.20)
0.074(1.90)
0.056(1.40)
0.047(1.20)
60 Volts
POWER
150 mW
0.012(0.30)
0.005(0.15)
0.030(0.75)
0.021(0.55)
0.054(1.35)
0.045(1.15)
• Collector current I
C
= -600mA
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: SOT-363
• Apporx. Weight: 0.0002 ounce, 0.006 gram
• Device Marking : M7A
0.044(1.10)
MAX.
0.010(0.25)
• Terminals : Solderable per MIL-STD-750,Method 2026
6
5
4
0.040(1.00)
0.031(0.80)
0.018(0.45)
0.006(0.15)
0.087(2.20)
0.078(2.00)
1
2
3
Fig.53
ABSOLUTE MAXIMUM RATINGS
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
-60
-60
-5.0
-600
Units
V
V
V
mA
THERMAL CHATACTERISTICS
Parameter
Max Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Storage Temperature
Junction Temperaure
Symbol
P
TOT
R
θJA
T
STG
T
J
Value
150
830
-55 to +150
-55 to +150
O
0.010(0.25)
0.003(0.08)
0.10 MAX.
Units
mW
C/W
O
C
C
O
Note 1 : Transistor mouted on FR-5 board 1.0 x 0.75 x 0.062 in.
May 12.2010-REV.00
PAGE . 1
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