MMBTSA733
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into five groups R, O, Y,
P and L, according to its DC current gain. As
complementary type the NPN transistor MMBTSC945
is recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (T
a
= 25
O
C)
Symbol
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
-V
CBO
-V
CEO
-V
EBO
-I
C
P
tot
T
j
T
S
Value
60
50
5
150
200
150
-55 to +150
Unit
V
V
V
mA
mW
O
C
C
O
MMBTSA733
Characteristics at T
amb
=25
O
C
Symbol
DC Current Gain
at -V
CE
=6V, -I
C
=1mA
Current Gain Group R
O
Y
P
L
Collector Base Breakdown Voltage
at -I
C
=100µA
Collector Emitter Breakdown Voltage
at -I
C
=10mA
Emitter Base Breakdown Voltage
at -I
E
=10µA
Collector Cutoff Current
at -V
CB
=60V
Emitter Cutoff Current
at -V
EB
=5V
Collector Saturation Voltage
at -I
C
=100mA, -I
B
=10mA
Base Emitter Voltage
at -V
CE
=6V, -I
C
=1mA
Gain Bandwidth Product
at -V
CE
=6V, -I
C
=10mA
Output Capacitance
at -V
CB
=10V, f=1MHz
Noise Figure
at -V
CE
=6V, -I
C
=0.3mA, f=100Hz, R
S
=10KΩ
F
-
6
20
dB
C
OB
-
2.8
-
pF
f
T
50
180
-
MHz
-V
BE(on)
0.5
-
0.8
V
-V
CE(sat)
-
-
0.3
V
-I
EBO
-
-
0.1
µA
-I
CBO
-
-
0.1
µA
-V
(BR)EBO
5
-
-
V
-V
(BR)CEO
50
-
-
V
-V
(BR)CBO
60
-
-
V
h
FE
h
FE
h
FE
h
FE
h
FE
40
70
120
200
350
-
-
-
-
-
80
140
240
400
700
-
-
-
-
-
Min.
Typ.
Max.
Unit
ST - Low Power RF
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