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MMBTH10

Description
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size123KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBTH10 Overview

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

超高频波段, 硅, NPN, 射频小信号晶体管

MMBTH10 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Collector-based maximum capacity0.7 pF
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)650 MHz
Base Number Matches1

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Download Datasheet
MMBTH10
NPN HIGH FREQUENCY TRANSISTOR
This device is designed for VHF/UHF amplifier applications and high output
VHF oscillators.
3
COLLECTOR
1
BASE
SPECIFICATION FEATURES
Guaranteed Minimum Current Gain-Bandwidth Product of 650 MHz
Collector Currents up to 50mA
Industry Standard SOT-23 Package
1
2
2
EMITTER
APPLICATIONS
Low Noise VHF/UHF Amplifiers and Mixers
Low Frequency Drift, High Output Oscillators
SOT-23
3
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
T
J
= 25°C
Symbol
V
CE0
V
CB0
V
EB0
I
C
P
D
TJ
T
stg
Value
25
30
3.0
50
225
-55 to 150
-55 to 150
Units
V
V
V
mA
mW
°C
°C
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
Operating Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
CHARACTERISTIC
Thermal Resistance - Junction to Ambient (Note 1)
Symbol
R
th JA
Value
556
Units
°C/W
Note 1: Device mounted on FR-5 board 1.0 x 0.75 x 0.062 in. with recommended minimum pad layout
4/18/2006
Page
1
www.panjit.com
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