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MMBTA55-AU_R1_000A1

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBTA55-AU_R1_000A1 Overview

Small Signal Bipolar Transistor,

MMBTA55-AU_R1_000A1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz

MMBTA55-AU_R1_000A1 Preview

Download Datasheet
MMBTA05-AU,MMBTA06-AU,MMBTA55-AU,MMBTA56-AU
NPN AND PNP HIGH VOLTAGE TRANSISTOR
VOLTAGE
60~80 Volts
FEATURES
• NPN and PNP silicon, planar design
• Collector current I
C
= 500mA
Acqire quality system certificate : TS16949
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
POWER
225 mWatts
SOT-23
Unit
inch(mm)
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0003 ounces, 0.0084 grams
• Marking :
M MB TA 0 5 -A U=B 0 5
MM B TA 0 6 -A U=B 0 6
M M B TA 5 5 -A U= B 5 5
MM B TA 5 6 -A U=B 5 6
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
MAXIMUM RATINGS
PA RA ME TE R
C o llec to r-E mi tte r Volta ge
C o llec to r-B as e Vo ltage
E mi tte r-B as e Volta ge
C o llec to r C urrent- C o nti nuous
C i rc ui t F i g ure
SYMB O-
MMB TA 05-A U MM BTA 55- AU M MB TA 0 6-A U MM BTA 56- AU UNITS
L
V
CEO
V
CBO
V
EB O
I
C
NP N
P NP
60
60
4 .0
500
NP N
P NP
80
80
V
V
V
mA
THERMAL CHARACTERISTICS
CHARACTERISTIC
Total Device Dissipation FR-5 Board (Note 1)T
A
=25
O
C
Derate above 25
O
C
Thermal Resistance , Junction to Ambient
Total Device Dissipation Alumina Substrate (Note 2)T
A
=25
O
C
Derate above 25
O
C
Thermal Resistance , Junction to Ambient
Junction and Storage Temperature
SYMBOL
P
D
JA
P
D
JA
T
J
,T
STG
MAX
225
1.8
556
300
2.4
417
-55 to 150
PNP
UNIT
mW
mW/
O
C
O
C/W
mW
mW/
O
C
O
C
C
NPN
O
1.FR-4=70 x
60
x
1mm.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 alumina
STAD-NOV.30.2005
PAGE . 1
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