MMBT918W datasheet, PDF - EEWORLD Datasheet

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MMBT918W: DescriptionUHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size87KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBT918W Overview

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

超高频波段, 硅, NPN, 射频小信号晶体管

MMBT918W Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	ROHS COMPLIANT, PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.05 A
Collector-based maximum capacity	3 pF
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	600 MHz

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MMBT918W

VHF/UHF NPN SILICON TRANSISTOR

VOLTAGE

FEATURES

• In compliance with EU RoHS 2002/95/EC directives

.004(.10)MIN.

15 Volts

POWER

225 mWatts

SOT-323

Unit: inch (mm)

• NPN silicon

.087(2.2)

.070(1.8)

.054(1.35)

.045(1.15)

MECHANICAL DATA

• Case: SOT-323, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 5 mg

• Marking: R1B

.056(1.40)

.047(1.20)

.006(.15)

.002(.05)

.004(.10)MAX.

.016(.40)

.008(.20)

ABSOLUTE RATINGS

PARAMETER

C ollector - Emi tter Voltage

C ollector - Base Voltage

Emi tter - Base Voltage

C ollector C urrent - C onti nuous

Symbol

CEO

CBO

EBO

Value

3.0

.044(1.1)

.035(0.9)

Uni ts

THERMAL CHARACTERISTICS

PARAMETER

Total D evi ce D i ssi pati on (Note1)T

=25

D erate above 25

Thermal Resi stance , Juncti on to Ambi ent

Juncti on and Storage Temperature

Symbol

J A

J ,

S T G

Value

225

1.8

556

-55 to 150

Uni ts

mW/

C /W

Note 1: FR.4 = 70 x 60 x 1mm.

REV.0.1-FEB.27.2009

.087(2.2)

.078(2.0)

PAGE . 1

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