MMBT5551 datasheet, PDF - EEWORLD Datasheet

MMBT5551: DescriptionRated power: 300mW Collector current Ic: 600mA Collector-emitter breakdown voltage Vce: 160V Transistor type: NPN; CategoryDiscrete semiconductor triode; File Size628KB，2 Pages; ManufacturerShenzhen Heketai Electronics Co., Ltd.; Websitehttp://www.heketai.com; Founded in 1992, Hekotech is a high-tech innovative enterprise specializing in the R&D, design, packaging, testing, production and sales of semiconductor analog chips and discrete devices. The product line includes lithium battery protection IC, charging management IC, LDO, MOSFET, diode, TVS, bridge stack, triode and other discrete devices and integrated circuits, providing customers with application solutions and on-site technical support services. The company has ISO9001, ISO14001, IATF16949 quality system certification. The products include semiconductors and passive components, which are widely used in power supply, lighting, medical electronics, small appliances, communications, security, instruments, industrial control, automotive electronics and other fields.

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Rated power: 300mW Collector current Ic: 600mA Collector-emitter breakdown voltage Vce: 160V Transistor type: NPN

Parameter Name	Attribute value
rated power	300mW
Collector current Ic	600mA
Collector-emitter breakdown voltage Vce	160V
Transistor type	NPN

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