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MMBT5551

Description
Rated power: 300mW Collector current Ic: 600mA Collector-emitter breakdown voltage Vce: 160V Transistor type: NPN
CategoryDiscrete semiconductor    triode   
File Size294KB,2 Pages
ManufacturerFORMOSAMS
Websitehttp://www.formosagr.com/
FMS is a leading global manufacturer and supplier with the advantages of upstream and downstream semiconductor integration and proprietary core technologies. It is mainly engaged in the research and development and production of discrete devices such as TVS, Schottky diodes, fast recovery diodes, bridge diodes, and MOS power semiconductors. With its insight into market trends, FMS continues to launch thin packages that meet market demand. At the same time, in order to layout product market segments and the company's marketing strategy planning, MOS products launched the Anbon Semi brand, which is also owned by Shenzhen Meiliwei Semiconductor.
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MMBT5551 Overview

Rated power: 300mW Collector current Ic: 600mA Collector-emitter breakdown voltage Vce: 160V Transistor type: NPN

MMBT5551 Parametric

Parameter NameAttribute value
rated power300mW
Collector current Ic600mA
Collector-emitter breakdown voltage Vce160V
Transistor typeNPN

MMBT5551 Preview

Download Datasheet
SOT-23 Plastic-Encapsulate Transistors
MMBT5551
TRANSISTOR (NPN)
Formosa MS
SOT-23
1. BASE
2. EMITTER
-
3. COLLECTOR
FEATURES
Complementary to MMBT5401
Ideal for medium power amplification and switching
MARKING: G1
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
180
160
6
0.6
300
150
-55-150
Units
V
V
V
A
mW
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
breakdown
Symbol
V
(BR)CBO
V
(BR)CEO
*
V
(BR)EBO
I
CBO
I
EBO
h
FE1
*
DC current gain
h
FE2
*
h
FE3
*
Collector-emitter saturation voltage
V
CEsat
*
V
BEsat
*
f
T
C
ob
C
ib
NF
Test
conditions
MIN
180
160
6
50
50
80
100
50
0.15
0.2
1
1
100
300
6
20
8
V
V
MHz
pF
pF
dB
300
TYP
MAX
UNIT
V
V
V
nA
nA
I
C
=100μA,I
E
=0
I
C
= 1mA, I
B
=0
I
E
= 10μA, I
C
=0
V
CB
= 120V, I
E
=0
V
EB
= 4V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
= 1mA
I
C
=50mA, I
B
= 5mA
V
CE
=10V,I
C
=10mA,f=100MHz
V
CB
=10V,I
E
=0,f=1MHz
V
BE
=0.5V,I
C
=0,f=1MHz
V
CE
=5V,I
c
=0.25mA,
f=10Hz to 15.7KHz,Rs=1kΩ
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Input capacitance
Noise figure
*Pulse test
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
2
Page 1
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