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MMBD914

Description
0.25 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size100KB,2 Pages
ManufacturerNanjing International Group Co.,Ltd
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MMBD914 Overview

0.25 A, 100 V, SILICON, SIGNAL DIODE

0.25 A, 100 V, 硅, 信号二极管

MMBD914 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionROHS COMPLIANT PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.3700 W
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current0.2500 A

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Download Datasheet
MMBD914
Silicon Epitaxial Planar Switching Diode
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
1
3
2
Marking Code:
5D
SOT-23 Plastic Package
Applications
• Ultra high speed switching application
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Reverse Voltage
Forward Current
Non-repetitive Peak Forward Surge Current (t = 1
μs)
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
I
FSM
P
tot
T
j
T
stg
Value
100
200
4
350
150
- 55 to + 150
Unit
V
mA
A
mW
O
C
C
O
Characteristics at T
a
= 25
O
C
Parameter
Forward Voltage
at I
F
= 10 mA
Reverse Breakdown Voltage
at I
R
= 100 µA
Reverse Current
at V
R
= 20 V
at V
R
= 75 V
Reverse Recovery Time
at I
F
= I
R
= 10 mA
Total Capacitance
at V
R
= 0 , f = 1 MHz
Symbol
V
F
V
(BR)R
I
R
t
rr
C
T
Min.
-
100
-
-
-
-
Max.
1
-
25
5
4
4
Unit
V
V
nA
µA
ns
pF
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